NCE2013J MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE2013J
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.8 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 13 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 VQgⓘ - Carga de la puerta: 23.5 nC
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 210 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
Paquete / Cubierta: DFN2X2-6L
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NCE2013J Datasheet (PDF)
nce2013j.pdf
http://www.ncepower.comNCE2013JNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE2013J uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages .This device is suitable for use as a load switchingapplication and a wide variety of other applications.General FeaturesSchematic diagram V = 20V,I = 13ADS DR
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