NCE2013J Specs and Replacement

Type Designator: NCE2013J

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: DFN2X2-6L

NCE2013J substitution

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NCE2013J datasheet

 ..1. Size:691K  ncepower
nce2013j.pdf pdf_icon

NCE2013J

http //www.ncepower.com NCE2013J NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2013J uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features Schematic diagram V = 20V,I = 13A DS D R ... See More ⇒

 8.1. Size:371K  ncepower
nce2012.pdf pdf_icon

NCE2013J

Pb Free Product http //www.ncepower.com NCE2012 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2012 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =12A Schematic diagram RDS(ON) ... See More ⇒

 8.2. Size:298K  ncepower
nce2010e.pdf pdf_icon

NCE2013J

Pb Free Product http //www.ncepower.com NCE2010E NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2010E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features ... See More ⇒

 8.3. Size:413K  ncepower
nce2014es.pdf pdf_icon

NCE2013J

Pb Free Product http //www.ncepower.com NCE2014ES NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2014ES uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =14A RDS(ON) ... See More ⇒

Detailed specifications: NCE16P07J, NCE16P40Q, NCE1805S, NCE1810AK, NCE1826K, NCE2004Y, NCE2006Y, NCE2012, 7N60, NCE2014ES, NCE2025I, NCE2025S, NCE2030U, NCE2090K, NCE20NP1006S, NCE20P05J, NCE20P05Y

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