NCE2014ES MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCE2014ES
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 14 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 7.2 nS
   Cossⓘ - Capacitancia de salida: 232 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: SOP8

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NCE2014ES Datasheet (PDF)

..1. Size:413K ncepower
nce2014es.pdf

Pb Free Producthttp://www.ncepower.com NCE2014ESNCE N-Channel Enhancement Mode Power MOSFET Description The NCE2014ES uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =14A RDS(ON)

8.1. Size:371K ncepower
nce2012.pdf

Pb Free Producthttp://www.ncepower.com NCE2012NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2012 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =12A Schematic diagram RDS(ON)

8.2. Size:298K ncepower
nce2010e.pdf

Pb Free Producthttp://www.ncepower.com NCE2010ENCE N-Channel Enhancement Mode Power MOSFET Description The NCE2010E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features

8.3. Size:691K ncepower
nce2013j.pdf

http://www.ncepower.comNCE2013JNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE2013J uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages .This device is suitable for use as a load switchingapplication and a wide variety of other applications.General FeaturesSchematic diagram V = 20V,I = 13ADS DR

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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