NCE2014ES MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE2014ES

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 14 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7.2 nS

Cossⓘ - Capacitancia de salida: 232 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: SOP8

 Búsqueda de reemplazo de NCE2014ES MOSFET

- Selecciónⓘ de transistores por parámetros

 

NCE2014ES datasheet

 ..1. Size:413K  ncepower
 nce2014es.pdf pdf_icon

NCE2014ES

Pb Free Product http //www.ncepower.com NCE2014ES NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2014ES uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =14A RDS(ON)

 8.1. Size:371K  ncepower
 nce2012.pdf pdf_icon

NCE2014ES

Pb Free Product http //www.ncepower.com NCE2012 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2012 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =12A Schematic diagram RDS(ON)

 8.2. Size:298K  ncepower
 nce2010e.pdf pdf_icon

NCE2014ES

Pb Free Product http //www.ncepower.com NCE2010E NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2010E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features

 8.3. Size:691K  ncepower
 nce2013j.pdf pdf_icon

NCE2014ES

http //www.ncepower.com NCE2013J NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2013J uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features Schematic diagram V = 20V,I = 13A DS D R

MOSTRAR MÁS

Otros transistores... NCE16P40Q, NCE1805S, NCE1810AK, NCE1826K, NCE2004Y, NCE2006Y, NCE2012, NCE2013J, IRFZ48N, NCE2025I, NCE2025S, NCE2030U, NCE2090K, NCE20NP1006S, NCE20P05J, NCE20P05Y, NCE20P07N