All MOSFET. NCE2014ES Datasheet

 

NCE2014ES MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE2014ES
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 14 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17.5 nC
   trⓘ - Rise Time: 7.2 nS
   Cossⓘ - Output Capacitance: 232 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: SOP8

 NCE2014ES Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE2014ES Datasheet (PDF)

 ..1. Size:413K  ncepower
 nce2014es.pdf

NCE2014ES NCE2014ES

Pb Free Producthttp://www.ncepower.com NCE2014ESNCE N-Channel Enhancement Mode Power MOSFET Description The NCE2014ES uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =14A RDS(ON)

 8.1. Size:371K  ncepower
 nce2012.pdf

NCE2014ES NCE2014ES

Pb Free Producthttp://www.ncepower.com NCE2012NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2012 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =12A Schematic diagram RDS(ON)

 8.2. Size:298K  ncepower
 nce2010e.pdf

NCE2014ES NCE2014ES

Pb Free Producthttp://www.ncepower.com NCE2010ENCE N-Channel Enhancement Mode Power MOSFET Description The NCE2010E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features

 8.3. Size:691K  ncepower
 nce2013j.pdf

NCE2014ES NCE2014ES

http://www.ncepower.comNCE2013JNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE2013J uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages .This device is suitable for use as a load switchingapplication and a wide variety of other applications.General FeaturesSchematic diagram V = 20V,I = 13ADS DR

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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