NCE3055 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE3055

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 34 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm

Encapsulados: SOT89

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NCE3055 datasheet

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 nce3055.pdf pdf_icon

NCE3055

Pb Free Product http //www.ncepower.com NCE3055 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3055 uses advanced trench technology to provide D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G Battery protection or in other switching application. S General Feature VDS =60V,ID =3.0

 8.1. Size:372K  ncepower
 nce3050ka.pdf pdf_icon

NCE3055

 8.2. Size:336K  ncepower
 nce3050.pdf pdf_icon

NCE3055

Pb Free Product http //www.ncepower.com NCE3050 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON)

 8.3. Size:311K  ncepower
 nce3050i.pdf pdf_icon

NCE3055

Pb Free Product http //www.ncepower.com NCE3050I NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE3015S, NCE3025G, NCE3030K, NCE3030Q, NCE3040Q, NCE3045G, NCE3050I, NCE3050KA, 2N7000, NCE3065G, NCE3065Q, NCE3080I, NCE3080L, NCE3085K, NCE30H10BG, NCE30H10G, NCE30H11BG