NCE3055 Datasheet and Replacement

Pb Free Producthttp://www.ncepower.com NCE3055NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3055 uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a GBattery protection or in other switching application. SGeneral Feature VDS =60V,ID =3.0

Pb Free ProductNCE3050KAhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE3050NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE3050INCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE3050KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON)