NCE3055 Specs and Replacement
Type Designator: NCE3055
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 34 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: SOT89
NCE3055 substitution
- MOSFET ⓘ Cross-Reference Search
NCE3055 datasheet
nce3055.pdf
Pb Free Product http //www.ncepower.com NCE3055 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3055 uses advanced trench technology to provide D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G Battery protection or in other switching application. S General Feature VDS =60V,ID =3.0... See More ⇒
nce3050.pdf
Pb Free Product http //www.ncepower.com NCE3050 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON) ... See More ⇒
nce3050i.pdf
Pb Free Product http //www.ncepower.com NCE3050I NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON) ... See More ⇒
Detailed specifications: NCE3015S, NCE3025G, NCE3030K, NCE3030Q, NCE3040Q, NCE3045G, NCE3050I, NCE3050KA, 2N7000, NCE3065G, NCE3065Q, NCE3080I, NCE3080L, NCE3085K, NCE30H10BG, NCE30H10G, NCE30H11BG
Keywords - NCE3055 MOSFET specs
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