NCE3065G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE3065G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 65 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 65 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 205 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0095 Ohm

Encapsulados: DFN5X6-8L

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NCE3065G datasheet

 ..1. Size:664K  ncepower
 nce3065g.pdf pdf_icon

NCE3065G

http //www.ncepower.com NCE3065G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3065G uses advanced trench technology and design General Features to provide excellent R with low gate charge. It can be V =30V,I =65A DS(ON) DS D used in a wide variety of applications. R =5.7m (typical) @ V =10V DS(ON) GS R =7.7m (typical) @ V =4.5V Application DS(ON) GS DC/

 7.1. Size:723K  ncepower
 nce3065q.pdf pdf_icon

NCE3065G

http //www.ncepower.com NCE3065Q NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3065Q uses advanced trench technology and design General Features to provide excellent R with low gate charge. It can be V =30V,I =65A DS(ON) DS D used in a wide variety of applications. R =4.2m (typical) @ V =10V DS(ON) GS R =6.7m (typical) @ V =4.5V Application DS(ON) GS DC/

 7.2. Size:429K  ncepower
 nce3065k.pdf pdf_icon

NCE3065G

http //www.ncepower.com NCE3065K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3065K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =65A RDS(ON)

 8.1. Size:833K  ncepower
 nce3068q.pdf pdf_icon

NCE3065G

http //www.ncepower.com NCE3068Q NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3068Q uses advanced trench technology and design General Features to provide excellent R with low gate charge. It can be V =30V,I =68A DS(ON) DS D used in a wide variety of applications. R =3.5m (max) @ V =10V DS(ON) GS R =6.2m (max) @ V =4.5V Application DS(ON) GS DC/DC Conve

MOSTRAR MÁS

Otros transistores... NCE3025G, NCE3030K, NCE3030Q, NCE3040Q, NCE3045G, NCE3050I, NCE3050KA, NCE3055, P55NF06, NCE3065Q, NCE3080I, NCE3080L, NCE3085K, NCE30H10BG, NCE30H10G, NCE30H11BG, NCE30H11G