NCE3065G Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NCE3065G
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 65 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 65 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 8 ns
Cossⓘ - Выходная емкость: 205 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0095 Ohm
Тип корпуса: DFN5X6-8L
- подбор MOSFET транзистора по параметрам
NCE3065G Datasheet (PDF)
nce3065g.pdf

http://www.ncepower.comNCE3065GNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3065G uses advanced trench technology and designGeneral Featuresto provide excellent R with low gate charge. It can be V =30V,I =65ADS(ON) DS Dused in a wide variety of applications. R =5.7m (typical) @ V =10VDS(ON) GSR =7.7m (typical) @ V =4.5VApplication DS(ON) GS DC/
nce3065q.pdf

http://www.ncepower.comNCE3065QNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3065Q uses advanced trench technology and designGeneral Featuresto provide excellent R with low gate charge. It can be V =30V,I =65ADS(ON) DS Dused in a wide variety of applications. R =4.2m (typical) @ V =10VDS(ON) GSR =6.7m (typical) @ V =4.5VApplication DS(ON) GS DC/
nce3065k.pdf

http://www.ncepower.com NCE3065KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3065K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =65A RDS(ON)
nce3068q.pdf

http://www.ncepower.comNCE3068QNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3068Q uses advanced trench technology and designGeneral Featuresto provide excellent R with low gate charge. It can be V =30V,I =68ADS(ON) DS Dused in a wide variety of applications. R =3.5m (max) @ V =10VDS(ON) GSR =6.2m (max) @ V =4.5VApplication DS(ON) GS DC/DC Conve
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: PMN70XPEA | IRF7306QPBF | ZVN4306GVTA | MDQ16N50GTH | ELM5K8473A | BML6402 | IXFP18N65X2
History: PMN70XPEA | IRF7306QPBF | ZVN4306GVTA | MDQ16N50GTH | ELM5K8473A | BML6402 | IXFP18N65X2



Список транзисторов
Обновления
MOSFET: ZM019N03N | DH116N08I | DH116N08F | DH116N08E | DH116N08D | DH116N08B | DH116N08 | DH10H037R | DH10H035R | DH100P40 | DH100P35I | DH100P35F | DH100P35E | DH100P35D | DH100P35B | DH100P35
Popular searches
2sc1344 | cs840f | 2n3053 equivalent | 2n3569 | 2sd667 | 2sc1111 | bc239 transistor equivalent | 3sk41