NCE30H10BG Todos los transistores

 

NCE30H10BG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE30H10BG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 65 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 348 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: DFN5X6-8L
 

 Búsqueda de reemplazo de NCE30H10BG MOSFET

   - Selección ⓘ de transistores por parámetros

 

NCE30H10BG Datasheet (PDF)

 ..1. Size:637K  ncepower
nce30h10bg.pdf pdf_icon

NCE30H10BG

http://www.ncepower.com NCE30H10BGNCE N-Channel Enhancement Mode Power MOSFETDescription General FeaturesThe NCE30H10BG uses advanced trench technology and V =30V,I =100ADS Ddesign to provide excellent R with low gate charge. It can R

 5.1. Size:681K  ncepower
nce30h10bk.pdf pdf_icon

NCE30H10BG

http://www.ncepower.com NCE30H10BKNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30H10BK uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =30V,I =100ADS DR

 6.1. Size:331K  ncepower
nce30h10g.pdf pdf_icon

NCE30H10BG

http://www.ncepower.com NCE30H10GNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3065G uses advanced trench technology and design General Features to provide excellent RDS(ON) with low gate charge. It can be VDS =30V,ID =100A used in a wide variety of applications. RDS(ON)=1.9m (typical) @ VGS=10V RDS(ON)=2.9m (typical) @ VGS=4.5V Application DC/

 6.2. Size:373K  ncepower
nce30h10.pdf pdf_icon

NCE30H10BG

Pb Free Producthttp://www.ncepower.com NCE30H10NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

Otros transistores... NCE3050I , NCE3050KA , NCE3055 , NCE3065G , NCE3065Q , NCE3080I , NCE3080L , NCE3085K , K3569 , NCE30H10G , NCE30H11BG , NCE30H11G , NCE30H12AK , NCE30H15B , NCE30H15BG , NCE30H15BK , NCE30H33LL .

History: SWHA069R10VS | SSB80R240SFD | KIA7N60H-220 | NP110N03PUG | TK8R2A06PL | NP33N075YDF | IRLSL4030PBF

 

 
Back to Top

 


 
.