NCE30H10G Todos los transistores

 

NCE30H10G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE30H10G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 65 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 24 nS
   Cossⓘ - Capacitancia de salida: 1135 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
   Paquete / Cubierta: DFN5X6-8L
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NCE30H10G Datasheet (PDF)

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NCE30H10G

http://www.ncepower.com NCE30H10GNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3065G uses advanced trench technology and design General Features to provide excellent RDS(ON) with low gate charge. It can be VDS =30V,ID =100A used in a wide variety of applications. RDS(ON)=1.9m (typical) @ VGS=10V RDS(ON)=2.9m (typical) @ VGS=4.5V Application DC/

 6.1. Size:681K  ncepower
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NCE30H10G

http://www.ncepower.com NCE30H10BKNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30H10BK uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =30V,I =100ADS DR

 6.2. Size:373K  ncepower
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NCE30H10G

Pb Free Producthttp://www.ncepower.com NCE30H10NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

 6.3. Size:395K  ncepower
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NCE30H10G

Pb Free Producthttp://www.ncepower.com NCE30H10KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: RJK5013DPP-E0 | SVT088R0NT | WFW40N25W | CEB83A3G | FDS6892A | SP8611 | NTLJS4159NT1G

 

 
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