NCE30H10G Specs and Replacement

Type Designator: NCE30H10G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 65 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 1135 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm

Package: DFN5X6-8L

NCE30H10G substitution

- MOSFET ⓘ Cross-Reference Search

 

NCE30H10G datasheet

 ..1. Size:331K  ncepower
 nce30h10g.pdf pdf_icon

NCE30H10G

http //www.ncepower.com NCE30H10G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3065G uses advanced trench technology and design General Features to provide excellent RDS(ON) with low gate charge. It can be VDS =30V,ID =100A used in a wide variety of applications. RDS(ON)=1.9m (typical) @ VGS=10V RDS(ON)=2.9m (typical) @ VGS=4.5V Application DC/... See More ⇒

 6.1. Size:681K  ncepower
 nce30h10bk.pdf pdf_icon

NCE30H10G

http //www.ncepower.com NCE30H10BK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H10BK uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =30V,I =100A DS D R ... See More ⇒

 6.2. Size:373K  ncepower
 nce30h10.pdf pdf_icon

NCE30H10G

Pb Free Product http //www.ncepower.com NCE30H10 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON) ... See More ⇒

 6.3. Size:395K  ncepower
 nce30h10k.pdf pdf_icon

NCE30H10G

Pb Free Product http //www.ncepower.com NCE30H10K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON) ... See More ⇒

SHOW MORE

Detailed specifications: NCE3050KA, NCE3055, NCE3065G, NCE3065Q, NCE3080I, NCE3080L, NCE3085K, NCE30H10BG, AON7408, NCE30H11BG, NCE30H11G, NCE30H12AK, NCE30H15B, NCE30H15BG, NCE30H15BK, NCE30H33LL, NCE30ND35Q

Keywords - NCE30H10G MOSFET specs

 NCE30H10G cross reference

 NCE30H10G equivalent finder

 NCE30H10G pdf lookup

 NCE30H10G substitution

 NCE30H10G replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs