FQA19N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQA19N60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 300 W
Tensión drenaje-fuente (Vds): 600 V
Tensión compuerta-fuente (Vgs): 30 V
Corriente continua de drenaje (Id): 18.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 5 V
Carga de compuerta (Qg): 70 nC
Resistencia drenaje-fuente RDS(on): 0.38 Ohm
Empaquetado / Estuche: TO3PN
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FQA19N60 Datasheet (PDF)
1.1. fqa19n60.pdf 
Size:583K _fairchild_semi
April 2000 TM QFET QFET QFET QFET FQA19N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 18.5A, 600V, RDS(on) = 0.38 ? @ VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 70 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been especially
4.1. fqa19n20l.pdf Size:731K _upd-mosfet
May 2000 TM QFET QFET QFET QFET 200V LOGIC N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 25A, 200V, RDS(on) = 0.14Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 27 nC) planar stripe, DMOS technology. • Low Crss ( typical 30 pF) This advanced technology has b
4.2. fqa19n20c.pdf Size:868K _fairchild_semi
® QFET FQA19N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 21.8A, 200V, RDS(on) = 0.17Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 40.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 85 pF) This advanced technology has been especially tailored to •
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