FQA19N60 Datasheet. Specs and Replacement

Type Designator: FQA19N60  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: TO3PN

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FQA19N60 datasheet

 ..1. Size:583K  fairchild semi
fqa19n60.pdf pdf_icon

FQA19N60

April 2000 TM QFET QFET QFET QFET FQA19N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 18.5A, 600V, RDS(on) = 0.38 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 70 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has bee... See More ⇒

 8.1. Size:731K  fairchild semi
fqa19n20l.pdf pdf_icon

FQA19N60

May 2000 TM QFET QFET QFET QFET 200V LOGIC N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 25A, 200V, RDS(on) = 0.14 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has b... See More ⇒

 8.2. Size:868K  fairchild semi
fqa19n20c.pdf pdf_icon

FQA19N60

QFET FQA19N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 21.8A, 200V, RDS(on) = 0.17 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40.5 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology has been especially tailored to ... See More ⇒

Detailed specifications: FQA11N90CF109, FQA13N50CF, FQA13N80F109, SDF07N80, FQA140N10, SDF07N65, FQA160N08, FQA170N06, AO4407A, SDF07N50T, FQA24N60, SDF07N50, FQA27N25, FQA28N15, FQA30N40, SDF06N60, FQA32N20C

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