All MOSFET. FQA19N60 Datasheet

 

FQA19N60 Datasheet and Replacement


   Type Designator: FQA19N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO3PN
 

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FQA19N60 Datasheet (PDF)

 ..1. Size:583K  fairchild semi
 fqa19n60.pdf pdf_icon

FQA19N60

April 2000TMQFETQFETQFETQFETFQA19N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 18.5A, 600V, RDS(on) = 0.38 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 70 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has bee

 8.1. Size:731K  fairchild semi
 fqa19n20l.pdf pdf_icon

FQA19N60

May 2000TMQFETQFETQFETQFET 200V LOGIC N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 25A, 200V, RDS(on) = 0.14 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has b

 8.2. Size:868K  fairchild semi
 fqa19n20c.pdf pdf_icon

FQA19N60

QFETFQA19N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 21.8A, 200V, RDS(on) = 0.17 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40.5 nC)planar stripe, DMOS technology. Low Crss ( typical 85 pF)This advanced technology has been especially tailored to

Datasheet: FQA11N90CF109 , FQA13N50CF , FQA13N80F109 , SDF07N80 , FQA140N10 , SDF07N65 , FQA160N08 , FQA170N06 , IRFP250 , SDF07N50T , FQA24N60 , SDF07N50 , FQA27N25 , FQA28N15 , FQA30N40 , SDF06N60 , FQA32N20C .

Keywords - FQA19N60 MOSFET datasheet

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