NCE30H12AK Todos los transistores

 

NCE30H12AK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE30H12AK
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 120 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 572 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0038 Ohm
   Paquete / Cubierta: TO252
 

 Búsqueda de reemplazo de NCE30H12AK MOSFET

   - Selección ⓘ de transistores por parámetros

 

NCE30H12AK Datasheet (PDF)

 ..1. Size:721K  ncepower
 nce30h12ak.pdf pdf_icon

NCE30H12AK

http://www.ncepower.comNCE30H12AKNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30H12AK uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =30V,I =120ADS DR

 6.1. Size:352K  ncepower
 nce30h12.pdf pdf_icon

NCE30H12AK

Pb Free Producthttp://www.ncepower.com NCE30H12NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =120A RDS(ON)

 6.2. Size:418K  ncepower
 nce30h12k.pdf pdf_icon

NCE30H12AK

Pb Free Producthttp://www.ncepower.com NCE30H12KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =120A RDS(ON)

 6.3. Size:953K  cn vbsemi
 nce30h12k.pdf pdf_icon

NCE30H12AK

NCE30H12Kwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0023 at VGS = 10 V 12030 82 nC0.0032 at VGS = 4.5 V 100APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFET

MOSTRAR MÁS

Otros transistores... NCE3065Q , NCE3080I , NCE3080L , NCE3085K , NCE30H10BG , NCE30H10G , NCE30H11BG , NCE30H11G , K4145 , NCE30H15B , NCE30H15BG , NCE30H15BK , NCE30H33LL , NCE30ND35Q , NCE30NP1812G , NCE30NP1812Q , NCE30NP4030G .

History: NDP6030PL | FDD9507L-F085

 

 
Back to Top

 


 
.