NCE30NP4030G MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NCE30NP4030G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE30NP4030G

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 180.8 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm

Encapsulados: DFN5X6-8L

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NCE30NP4030G datasheet

..1. Size:413K ncepower
nce30np4030g.pdf pdf_icon

http //www.ncepower.com NCE30NP4030G NCE N&P-Channel complementary Power MOSFET Description The NCE30NP4030G uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use in inverter and other applications. Genera Features N-channel P-channel VDS = 30V,ID = 40A VDS = -30V,ID =- 30A Schematic diagram RDS(ON)

7.1. Size:425K ncepower
nce30np07s.pdf pdf_icon

http //www.ncepower.com NCE30NP07S N and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP07S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5

7.2. Size:380K ncepower
nce30np1812k.pdf pdf_icon

NCE30NP1812K http //www.ncepower.com N and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP1812K uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel Schematic diagram VDS =30V,ID =18A

7.3. Size:928K ncepower
nce30np1812g.pdf pdf_icon

http //www.ncepower.com NCE30NP1812G NCE N-Channel and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP1812G uses advanced trench technology to provide excellent R and low gate charge.This device is DS(ON) suitable for use in inverter and other applications. Genera Features N-channel P-channel Schematic diagram V = 30V,I = 18A V = -30V,I =- 12A DS D DS D R

Otros transistores... NCE30H12AK, NCE30H15B, NCE30H15BG, NCE30H15BK, NCE30H33LL, NCE30ND35Q, NCE30NP1812G, NCE30NP1812Q, SPP20N60C3, NCE30P06J, NCE30P10S, NCE30P12BS, NCE30P15AS, NCE30P16Q, NCE30P25BQ, NCE30P25Q, NCE30P30L

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