NCE30NP4030G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

http://www.ncepower.com NCE30NP4030GNCE N&P-Channel complementary Power MOSFET Description The NCE30NP4030G uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use in inverter and other applications. Genera Features N-channel P-channel VDS = 30V,ID = 40A VDS = -30V,ID =- 30A Schematic diagram RDS(ON)

http://www.ncepower.com NCE30NP07SN and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP07S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5

NCE30NP1812Khttp://www.ncepower.com N and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP1812K uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel Schematic diagram VDS =30V,ID =18A

http://www.ncepower.comNCE30NP1812GNCE N-Channel and P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30NP1812G uses advanced trench technology toprovide excellent R and low gate charge.This device isDS(ON)suitable for use in inverter and other applications.Genera FeaturesN-channel P-channelSchematic diagram V = 30V,I = 18A V = -30V,I =- 12ADS D DS DR

http://www.ncepower.com NCE30NP1812Q NCE N-Channel and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP1812Q uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use in inverter and other applications. Genera Features N-channel P-channel Schematic diagram VDS = 30V,ID = 18A VDS = -30V,ID =- 12A