NCE30NP4030G
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Наименование прибора: NCE30NP4030G
Тип транзистора: MOSFET
Полярность: NP
Pdⓘ - Максимальная рассеиваемая мощность: 35
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.2
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 30
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 17
nC
trⓘ -
Время нарастания: 12
ns
Cossⓘ - Выходная емкость: 180.8
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.023
Ohm
Тип корпуса:
DFN5X6-8L
Аналог (замена) для NCE30NP4030G
NCE30NP4030G
Datasheet (PDF)
..1. Size:413K ncepower
nce30np4030g.pdf 
http://www.ncepower.com NCE30NP4030GNCE N&P-Channel complementary Power MOSFET Description The NCE30NP4030G uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use in inverter and other applications. Genera Features N-channel P-channel VDS = 30V,ID = 40A VDS = -30V,ID =- 30A Schematic diagram RDS(ON)
7.1. Size:425K ncepower
nce30np07s.pdf 
http://www.ncepower.com NCE30NP07SN and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP07S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5
7.2. Size:380K ncepower
nce30np1812k.pdf 
NCE30NP1812Khttp://www.ncepower.com N and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP1812K uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel Schematic diagram VDS =30V,ID =18A
7.3. Size:928K ncepower
nce30np1812g.pdf 
http://www.ncepower.comNCE30NP1812GNCE N-Channel and P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30NP1812G uses advanced trench technology toprovide excellent R and low gate charge.This device isDS(ON)suitable for use in inverter and other applications.Genera FeaturesN-channel P-channelSchematic diagram V = 30V,I = 18A V = -30V,I =- 12ADS D DS DR
7.4. Size:437K ncepower
nce30np1812q.pdf 
http://www.ncepower.com NCE30NP1812Q NCE N-Channel and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP1812Q uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use in inverter and other applications. Genera Features N-channel P-channel Schematic diagram VDS = 30V,ID = 18A VDS = -30V,ID =- 12A
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