NCE3400E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE3400E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 5.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2.8 nS

Cossⓘ - Capacitancia de salida: 66.4 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: SOT-23

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NCE3400E datasheet

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 nce3400e.pdf pdf_icon

NCE3400E

http //www.ncepower.com NCE3400E NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3400E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. It is ESD protested. Schematic diagram General Features

 7.1. Size:326K  ncepower
 nce3400.pdf pdf_icon

NCE3400E

Pb Free Product http //www.ncepower.com NCE3400 NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S General Features Schematic diagram

 7.2. Size:278K  ncepower
 nce3400xy.pdf pdf_icon

NCE3400E

NCE3400XY http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE3400XY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram General Features VDS = 30

 7.3. Size:298K  ncepower
 nce3400x.pdf pdf_icon

NCE3400E

http //www.ncepower.com NCE3400X NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE3400X uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S General Features Schematic diagram VDS = 30V,

MOSTRAR MÁS

Otros transistores... NCE30P25Q, NCE30P30L, NCE30P40K, NCE30P55K, NCE30P55L, NCE30P60G, NCE30P85K, NCE3134, IRFP450, NCE3400XY, NCE3401A, NCE3401BY, NCE3401E, NCE3401Y, NCE3402, NCE3402A, NCE3406AN