NCE3400E Datasheet and Replacement

http://www.ncepower.com NCE3400ENCE N-Channel Enhancement Mode Power MOSFET Description The NCE3400E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. It is ESD protested. Schematic diagram General Features

Pb Free Producthttp://www.ncepower.com NCE3400NCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SGeneral Features Schematic diagram

NCE3400XYhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3400XY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram General Features VDS = 30

http://www.ncepower.com NCE3400XNCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3400X uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SGeneral Features Schematic diagram VDS = 30V,

http://www.ncepower.com NCE3400AYNCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3400AY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SGeneral Features Schematic diagram VDS = 30

Pb Free Producthttp://www.ncepower.com NCE3400ANCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3400A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SGeneral Features Schematic diagram

NCE3400Awww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G