NCE3401E Todos los transistores

 ..1. Size:615K  ncepower
 nce3401e.pdf

Pb Free Product http //www.ncepower.com NCE3401E NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3401E uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.It is ESD protested. General Features V = -30V,I = -4.4A DS D

 7.1. Size:249K  1
 nce3401ay.pdf

Pb Free Product http //www.ncepower.com NCE3401AY NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE3401AY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram VDS = -30

 7.2. Size:248K  ncepower
 nce3401a.pdf

Pb Free Product http //www.ncepower.com NCE3401A NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3401A uses advanced trench technology to provide D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G load switch or in PWM applications. S General Features VDS = -30V,ID = -4.4A Schematic

 7.3. Size:241K  ncepower
 nce3401.pdf

Pb Free Product http //www.ncepower.com NCE3401 NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -30V,ID

 7.4. Size:265K  ncepower
 nce3401by.pdf

http //www.ncepower.com NCE3401BY NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE3401BY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -30V,ID = -4.4A RD

 7.5. Size:243K  ncepower
 nce3401y.pdf

Pb Free Product http //www.ncepower.com NCE3401Y NCE P-Channel Enhancement Mode Power MOSFET D Description The NCE3401Y uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -30V,

 7.6. Size:267K  ncepower
 nce3401ay.pdf

http //www.ncepower.com NCE3401AY NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE3401AY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -30V,ID = -4.4A RD