NCE3401E datasheet, аналоги, основные параметры

Наименование производителя: NCE3401E  📄📄 

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.3 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.4 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 3 ns

Cossⓘ - Выходная емкость: 115 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.055 Ohm

Тип корпуса: SOT-23

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Аналог (замена) для NCE3401E

- подборⓘ MOSFET транзистора по параметрам

 

NCE3401E даташит

 ..1. Size:615K  ncepower
 nce3401e.pdf pdf_icon

NCE3401E

Pb Free Product http //www.ncepower.com NCE3401E NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3401E uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.It is ESD protested. General Features V = -30V,I = -4.4A DS D

 7.1. Size:249K  1
 nce3401ay.pdf pdf_icon

NCE3401E

Pb Free Product http //www.ncepower.com NCE3401AY NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE3401AY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram VDS = -30

 7.2. Size:248K  ncepower
 nce3401a.pdf pdf_icon

NCE3401E

Pb Free Product http //www.ncepower.com NCE3401A NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3401A uses advanced trench technology to provide D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G load switch or in PWM applications. S General Features VDS = -30V,ID = -4.4A Schematic

 7.3. Size:241K  ncepower
 nce3401.pdf pdf_icon

NCE3401E

Pb Free Product http //www.ncepower.com NCE3401 NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -30V,ID

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