NCE3415E Todos los transistores

 

NCE3415E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE3415E
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 11.3 nC
   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 121.6 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: SOT-23
 

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NCE3415E Datasheet (PDF)

 ..1. Size:242K  ncepower
 nce3415e.pdf pdf_icon

NCE3415E

http://www.ncepower.com NCE3415ENCE P-Channel Enhancement Mode Power MOSFET Description The NCE3415E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features VDS = -20V,ID =-4

 7.1. Size:263K  ncepower
 nce3415y.pdf pdf_icon

NCE3415E

Pb Free Producthttp://www.ncepower.com NCE3415YNCE P-Channel Enhancement Mode Power MOSFET Description The NCE3415Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features

 7.2. Size:283K  ncepower
 nce3415.pdf pdf_icon

NCE3415E

Pb Free Producthttp://www.ncepower.com NCE3415NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features VDS = -20V,ID =-4A S

 8.1. Size:261K  ncepower
 nce3416.pdf pdf_icon

NCE3415E

Pb Free Producthttp://www.ncepower.com NCE3416NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features VDS = 20V,ID =6.5A Sc

MOSTRAR MÁS

Otros transistores... NCE3401BY , NCE3401E , NCE3401Y , NCE3402 , NCE3402A , NCE3406AN , NCE3407A , NCE3407E , IRFZ46N , NCE3415Y , NCE3417 , NCE3420X , NCE3N150 , NCE3N150D , NCE3N150F , NCE3N150PF , NCE3N150T .

 

 
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