All MOSFET. NCE3415E Datasheet

 

NCE3415E Datasheet and Replacement


   Type Designator: NCE3415E
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 121.6 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT-23
 

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NCE3415E Datasheet (PDF)

 ..1. Size:242K  ncepower
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NCE3415E

http://www.ncepower.com NCE3415ENCE P-Channel Enhancement Mode Power MOSFET Description The NCE3415E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features VDS = -20V,ID =-4

 7.1. Size:263K  ncepower
 nce3415y.pdf pdf_icon

NCE3415E

Pb Free Producthttp://www.ncepower.com NCE3415YNCE P-Channel Enhancement Mode Power MOSFET Description The NCE3415Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features

 7.2. Size:283K  ncepower
 nce3415.pdf pdf_icon

NCE3415E

Pb Free Producthttp://www.ncepower.com NCE3415NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features VDS = -20V,ID =-4A S

 8.1. Size:261K  ncepower
 nce3416.pdf pdf_icon

NCE3415E

Pb Free Producthttp://www.ncepower.com NCE3416NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features VDS = 20V,ID =6.5A Sc

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Datasheet: NCE3401BY , NCE3401E , NCE3401Y , NCE3402 , NCE3402A , NCE3406AN , NCE3407A , NCE3407E , SI2302 , NCE3415Y , NCE3417 , NCE3420X , NCE3N150 , NCE3N150D , NCE3N150F , NCE3N150PF , NCE3N150T .

History: STN2342 | CS6N60F | PJA3415

Keywords - NCE3415E MOSFET datasheet

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