NCE3415E Specs and Replacement

Type Designator: NCE3415E

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 121.6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SOT-23

NCE3415E substitution

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NCE3415E datasheet

 ..1. Size:242K  ncepower
nce3415e.pdf pdf_icon

NCE3415E

http //www.ncepower.com NCE3415E NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3415E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features VDS = -20V,ID =-4... See More ⇒

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nce3415y.pdf pdf_icon

NCE3415E

Pb Free Product http //www.ncepower.com NCE3415Y NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3415Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features ... See More ⇒

 7.2. Size:283K  ncepower
nce3415.pdf pdf_icon

NCE3415E

Pb Free Product http //www.ncepower.com NCE3415 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features VDS = -20V,ID =-4A S... See More ⇒

 8.1. Size:261K  ncepower
nce3416.pdf pdf_icon

NCE3415E

Pb Free Product http //www.ncepower.com NCE3416 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features VDS = 20V,ID =6.5A Sc... See More ⇒

Detailed specifications: NCE3401BY, NCE3401E, NCE3401Y, NCE3402, NCE3402A, NCE3406AN, NCE3407A, NCE3407E, SI2302, NCE3415Y, NCE3417, NCE3420X, NCE3N150, NCE3N150D, NCE3N150F, NCE3N150PF, NCE3N150T

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