NCE3N150D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCE3N150D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 187 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 32 nC
   trⓘ - Tiempo de subida: 45 nS
   Cossⓘ - Capacitancia de salida: 61 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 7.5 Ohm
   Paquete / Cubierta: TO-263

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NCE3N150D Datasheet (PDF)

..1. Size:619K ncepower
nce3n150d.pdf

NCE3N150DN-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1650 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 5.5 DS(ON)TYPSwitched applications.ID 3 AQg 32 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched applications

6.1. Size:627K ncepower
nce3n150t.pdf

NCE3N150TN-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1650 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 5.5 DS(ON)TYPSwitched applications.ID 3 AQg 32 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched applications

6.2. Size:608K ncepower
nce3n150f.pdf

NCE3N150FN-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1650 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 5.5 DS(ON)TYPSwitched applications.ID 3 AQg 32 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched applications

6.3. Size:648K ncepower
nce3n150pf.pdf

NCE3N150PFN-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1650 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 5.5 DS(ON)TYPSwitched applications.ID 3 AQg 32 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched application

6.4. Size:638K ncepower
nce3n150.pdf

NCE3N150N-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1650 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 5.5 DS(ON)TYPSwitched applications.ID 3 AQg 32 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched applications

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