NCE3N150D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE3N150D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 187 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 1500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 45 nS
Cossⓘ - Capacitancia de salida: 61 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 7.5 Ohm
Paquete / Cubierta: TO-263
Búsqueda de reemplazo de NCE3N150D MOSFET
NCE3N150D Datasheet (PDF)
nce3n150d.pdf
NCE3N150DN-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1650 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 5.5 DS(ON)TYPSwitched applications.ID 3 AQg 32 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched applications
nce3n150t.pdf
NCE3N150TN-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1650 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 5.5 DS(ON)TYPSwitched applications.ID 3 AQg 32 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched applications
nce3n150f.pdf
NCE3N150FN-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1650 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 5.5 DS(ON)TYPSwitched applications.ID 3 AQg 32 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched applications
nce3n150pf.pdf
NCE3N150PFN-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1650 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 5.5 DS(ON)TYPSwitched applications.ID 3 AQg 32 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched application
Otros transistores... NCE3406AN , NCE3407A , NCE3407E , NCE3415E , NCE3415Y , NCE3417 , NCE3420X , NCE3N150 , IRFB31N20D , NCE3N150F , NCE3N150PF , NCE3N150T , NCE3N170 , NCE3N170D , NCE3N170F , NCE3N170PF , NCE3N170T .
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History: AO4922 | HUFA75339S3S | HFS4N60 | HAT2137H
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