All MOSFET. NCE3N150D Datasheet

 

NCE3N150D MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE3N150D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 187 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 32 nC
   trⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 61 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm
   Package: TO-263

 NCE3N150D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE3N150D Datasheet (PDF)

 ..1. Size:619K  ncepower
 nce3n150d.pdf

NCE3N150D NCE3N150D

NCE3N150DN-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1650 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 5.5 DS(ON)TYPSwitched applications.ID 3 AQg 32 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched applications

 6.1. Size:627K  ncepower
 nce3n150t.pdf

NCE3N150D NCE3N150D

NCE3N150TN-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1650 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 5.5 DS(ON)TYPSwitched applications.ID 3 AQg 32 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched applications

 6.2. Size:608K  ncepower
 nce3n150f.pdf

NCE3N150D NCE3N150D

NCE3N150FN-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1650 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 5.5 DS(ON)TYPSwitched applications.ID 3 AQg 32 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched applications

 6.3. Size:648K  ncepower
 nce3n150pf.pdf

NCE3N150D NCE3N150D

NCE3N150PFN-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1650 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 5.5 DS(ON)TYPSwitched applications.ID 3 AQg 32 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched application

 6.4. Size:638K  ncepower
 nce3n150.pdf

NCE3N150D NCE3N150D

NCE3N150N-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1650 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 5.5 DS(ON)TYPSwitched applications.ID 3 AQg 32 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched applications

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SLI80R850SJ | IRFS642

 

 
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