NCE3N170PF Todos los transistores

 

NCE3N170PF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE3N170PF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 88 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2.9 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 8 Ohm
   Paquete / Cubierta: TO-3PF
 

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NCE3N170PF Datasheet (PDF)

 ..1. Size:664K  ncepower
 nce3n170pf.pdf pdf_icon

NCE3N170PF

NCE3N170PFN-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1850 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 6 DS(ON)TYPSwitched applications.ID 2.9 AQg 33 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched application

 6.1. Size:625K  ncepower
 nce3n170f.pdf pdf_icon

NCE3N170PF

NCE3N170FN-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1850 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 6 DS(ON)TYPSwitched applications.ID 2.9 AQg 33 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched applications

 6.2. Size:635K  ncepower
 nce3n170d.pdf pdf_icon

NCE3N170PF

NCE3N170DN-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1850 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 6 DS(ON)TYPSwitched applications.ID 2.9 AQg 33 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched applications

 6.3. Size:643K  ncepower
 nce3n170t.pdf pdf_icon

NCE3N170PF

NCE3N170TN-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1850 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 6 DS(ON)TYPSwitched applications.ID 2.9 AQg 33 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched applications

MOSTRAR MÁS

Otros transistores... NCE3N150 , NCE3N150D , NCE3N150F , NCE3N150PF , NCE3N150T , NCE3N170 , NCE3N170D , NCE3N170F , RU6888R , NCE3N170T , NCE4003 , NCE4005 , NCE4015S , NCE4090G , NCE4090K , NCE40H10K , NCE40H11 .

History: SRT06N027HT | WMS17P03TS | JFPC18N60C | R8008ANX | NCEP1212AS | IRFR9120N | FDB14AN06LA0-F085

 

 
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