NCE3N170PF Specs and Replacement

Type Designator: NCE3N170PF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 88 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.9 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm

Package: TO-3PF

NCE3N170PF substitution

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NCE3N170PF datasheet

 ..1. Size:664K  ncepower
 nce3n170pf.pdf pdf_icon

NCE3N170PF

NCE3N170PF N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced V 1850 V DS min@Tjmax technology and design.This high voltage MOSFET fits R 6 DS(ON)TYP Switched applications. ID 2.9 A Qg 33 nC Features High speed switching Intrinsic capacitances and Qg minimized 100% Avalanche Tested Application Switched application... See More ⇒

 6.1. Size:625K  ncepower
 nce3n170f.pdf pdf_icon

NCE3N170PF

NCE3N170F N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced V 1850 V DS min@Tjmax technology and design.This high voltage MOSFET fits R 6 DS(ON)TYP Switched applications. ID 2.9 A Qg 33 nC Features High speed switching Intrinsic capacitances and Qg minimized 100% Avalanche Tested Application Switched applications... See More ⇒

 6.2. Size:635K  ncepower
 nce3n170d.pdf pdf_icon

NCE3N170PF

NCE3N170D N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced V 1850 V DS min@Tjmax technology and design.This high voltage MOSFET fits R 6 DS(ON)TYP Switched applications. ID 2.9 A Qg 33 nC Features High speed switching Intrinsic capacitances and Qg minimized 100% Avalanche Tested Application Switched applications... See More ⇒

 6.3. Size:643K  ncepower
 nce3n170t.pdf pdf_icon

NCE3N170PF

NCE3N170T N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced V 1850 V DS min@Tjmax technology and design.This high voltage MOSFET fits R 6 DS(ON)TYP Switched applications. ID 2.9 A Qg 33 nC Features High speed switching Intrinsic capacitances and Qg minimized 100% Avalanche Tested Application Switched applications... See More ⇒

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Detailed specifications: NCE3N150, NCE3N150D, NCE3N150F, NCE3N150PF, NCE3N150T, NCE3N170, NCE3N170D, NCE3N170F, AO3400A, NCE3N170T, NCE4003, NCE4005, NCE4015S, NCE4090G, NCE4090K, NCE40H10K, NCE40H11

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