NCE4090K Todos los transistores

 ..1. Size:688K  ncepower
 nce4090k.pdf

Pb Free Product NCE4090K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4090K uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =40V,I =90A DS D Schematic diagram R =4.2m @ V =10V (Typ) DS(ON) GS R =7.2m @ V =4.5V (Typ)

 7.1. Size:352K  ncepower
 nce4090g.pdf

Pb Free Product NCE4090G http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4090G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =90A RDS(ON)

 9.1. Size:1165K  ncepower
 nce40td120ww.pdf

Pb Free Product NCE40TD120WW 1200V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching

 9.2. Size:1433K  ncepower
 nce40er65bpf.pdf

Pb Free Product NCE40ER65BPF 650V, 40A, Trench FS III Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS III IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSIII Technology offering Very low V CE(sat) High speed switching

 9.3. Size:590K  ncepower
 nce40th60bp.pdf

PbFreeProduct NCE40TH60BP 600V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High speed sw

 9.4. Size:397K  ncepower
 nce40p70k.pdf

Pb Free Product http //www.ncepower.com NCE40P70K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P70K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-70A RDS(ON)

 9.5. Size:359K  ncepower
 nce40td120bt.pdf

PbFreeProduct NCE40TD120BT 1200V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw

 9.6. Size:339K  ncepower
 nce40h25ll.pdf

http //www.ncepower.com NCE40H25LL NCE N-Channel Enhancement Mode Power MOSFET General Features Description VDS =40V ,ID =250A The NCE40H25LL uses advanced trench technology and RDS(ON)

 9.7. Size:294K  ncepower
 nce40p40d.pdf

Pb Free Product http //www.ncepower.com NCE40P40D NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P40D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-40A RDS(ON)

 9.8. Size:1873K  ncepower
 nce40td65b.pdf

Pb Free Product NCE40TD65B 650V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching

 9.9. Size:783K  ncepower
 nce40ed65bt.pdf

NCE40ED65BT 650V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.50V(Typ.) @ IC = 40

 9.10. Size:353K  ncepower
 nce4080d.pdf

http //www.ncepower.com NCE4080D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4080D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =80A Schematic diagram RDS(ON)

 9.11. Size:1817K  ncepower
 nce40td60bp.pdf

 9.12. Size:1119K  ncepower
 nce40ed65vt.pdf

NCE40ED65VT 650V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC = 40

 9.13. Size:480K  ncepower
 nce40td120vt.pdf

PbFreeProduct NCE40TD120VT 1200V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw

 9.14. Size:669K  ncepower
 nce40h10k.pdf

NCE40H10K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H10K uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =40V,I =100A DS D Schematic diagram R

 9.15. Size:753K  ncepower
 nce40h11k.pdf

Pb Free Product NCE40H11K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H11K uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =40V,I =110A DS D Schematic diagram R

 9.16. Size:337K  ncepower
 nce4060i.pdf

Pb Free Product NCE4060I http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4060I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =60A RDS(ON)

 9.17. Size:368K  ncepower
 nce4009s.pdf

Pb Free Product http //www.ncepower.com NCE4009S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4009S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Schematic diagram General Features N-Channel VDS =4

 9.18. Size:372K  ncepower
 nce40td120wt.pdf

PbFreeProduct NCE40TD120WT 1200V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw

 9.19. Size:420K  ncepower
 nce4012s.pdf

Pb Free Product NCE4012S http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4012S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =12A Schematic diagram RDS(ON)

 9.20. Size:470K  ncepower
 nce40p40k.pdf

Pb Free Product http //www.ncepower.com NCE40P40K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P40K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-40A Schematic diagram RDS(ON)

 9.21. Size:293K  ncepower
 nce40p05y.pdf

Pb Free Product http //www.ncepower.com NCE40P05Y NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P05Y uses advanced trench technology and D design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. G General Features VDS =-40V,ID =-5.3A S RDS(ON)

 9.22. Size:428K  ncepower
 nce4080k.pdf

Pb Free Product NCE4080K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =80A RDS(ON)

 9.23. Size:401K  ncepower
 nce40h12.pdf

Pb Free Product NCE40H12 http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)

 9.24. Size:613K  ncepower
 nce4015s.pdf

NCE4015S http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4015S uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =40V,I =15A Schematic diagram DS D R

 9.25. Size:637K  ncepower
 nce40p25g.pdf

http //www.ncepower.com NCE40P25G NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P25G uses uses advanced trench technology to General Features provide excellent R , This device is suitable for use as a load V =-40V,I =-25A DS(ON) DS D switch or power management. R =11.5m (typical) @ V =10V DS(ON) GS R =18.5m (typical) @ V =4.5V Application DS(ON) GS DC/

 9.26. Size:1032K  ncepower
 nce40th60bpf.pdf

Pb Free Product NCE40TH60BPF 600V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High speed switchin

 9.27. Size:389K  ncepower
 nce40td65bt.pdf

PbFreeProduct NCE40TD65BT 650V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High sp

 9.28. Size:1203K  ncepower
 nce40ed120vtp.pdf

NCE40ED120VTP 1200V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC

 9.29. Size:398K  ncepower
 nce40h29d.pdf

Pb Free Product http //www.ncepower.com NCE40H29D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H29D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V ,ID =290A RDS(ON)

 9.30. Size:396K  ncepower
 nce40p06s.pdf

Pb Free Product http //www.ncepower.com NCE40P06S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-6A RDS(ON)

 9.31. Size:402K  ncepower
 nce40p13s.pdf

Pb Free Product http //www.ncepower.com NCE40P13S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P13S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-13A RDS(ON)

 9.32. Size:1086K  ncepower
 nce40th60bt.pdf

Pb Free Product NCE40TH60BT 600V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High speed switching

 9.33. Size:719K  ncepower
 nce40p20q1.pdf

http //www.ncepower.com NCE40P20Q1 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P20Q1 uses advanced trench technology to provide General Features excellent R , This device is suitable for use as a load switch DS(ON) V = -40V,I = -20A DS D or power management. R

 9.34. Size:983K  ncepower
 nce40np2815g.pdf

NCE40NP2815G http //www.ncepower.com NCE N&P-Channel complementary Power MOSFET Description The NCE40NP2815G uses advanced trench technology and design to provide excellent R with low gate DS(ON) charge. It can be used in a wide variety of applications. General Features Schematic diagram N channel V =40V,I =28A DS D R

 9.35. Size:361K  ncepower
 nce40h21.pdf

Pb Free Product http //www.ncepower.com NCE40H21 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V ,ID =210A Schematic diagram RDS(ON)

 9.36. Size:776K  ncepower
 nce40eu65ut.pdf

NCE40EU65UT 650V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.80V(Typ.) @ IC = 40

 9.37. Size:656K  ncepower
 nce4005.pdf

http //www.ncepower.com NCE4005 NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE4005 uses advanced trench technology to provide G excellent R , low gate charge. This device is suitable for DS(ON) use as a Battery protection or in other switching application. S General Features Schematic Diagram V =40V,I =5A DS D R = 22m @ V =10V(Typ) DS(ON) GS R = 36m @

 9.38. Size:655K  ncepower
 nce40nd25q.pdf

http //www.ncepower.com NCE40ND25Q NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40ND25Q uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =40V,I =25A Schematic Diagram DS D R =13.2m @ V =10V DS(ON) GS R =18m @ V =4.5V DS(ON) GS High densi

 9.39. Size:696K  ncepower
 nce4003a.pdf

http //www.ncepower.com NCE4003A NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE4003A uses advanced trench technology to provide G excellent R , low gate charge. This device is suitable for DS(ON) use as a Battery protection or in other switching application. S General Features Schematic Diagram V =40V,I =3A DS D R = 32m @ V =10V(Typ) DS(ON) GS R = 43m

 9.40. Size:530K  ncepower
 nce40nd0812s.pdf

Pb Free Product NCE40ND0812S http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40ND0812S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =40V,ID =8A VDS =40V,ID =12A RDS(ON)

 9.41. Size:390K  ncepower
 nce4080.pdf

Pb Free Product NCE4080 http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4080 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =80A RDS(ON)

 9.42. Size:458K  ncepower
 nce40h12k.pdf

 9.43. Size:742K  ncepower
 nce40p15q.pdf

http //www.ncepower.com NCE40P15Q NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P15Q uses advanced trench technology to provide General Features excellent R , This device is suitable for use as a load switch DS(ON) V = -40V,I = -15A DS D or power management. R

 9.44. Size:383K  ncepower
 nce40td120lp.pdf

PbFreeProduct NCE40TD120LP 1200V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw

 9.45. Size:1416K  ncepower
 nce40er65bt.pdf

Pb Free Product NCE40ER65BT 650V, 40A, Trench FS III Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS III IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSIII Technology offering Very low V CE(sat) High speed switching

 9.46. Size:681K  ncepower
 nce4003.pdf

http //www.ncepower.com NCE4003 NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE4003 uses advanced trench technology to provide G excellent R , low gate charge. This device is suitable for DS(ON) use as a Battery protection or in other switching application. S General Features Schematic Diagram V =40V,I =3A DS D R = 33m @ V =10V(Typ) DS(ON) GS R = 52m @

 9.47. Size:1870K  ncepower
 nce40td60bpf.pdf

 9.48. Size:510K  ncepower
 nce40t60bp.pdf

PbFreeProduct NCE40T60BP 600V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High speed swi

 9.49. Size:476K  ncepower
 nce40ts120vtp.pdf

PbFreeProduct NCE40TS120VTP 1200V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed s

 9.50. Size:349K  ncepower
 nce40p15k.pdf

NCE40P15K http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-40V,ID =-15A RDS(ON)

 9.51. Size:1189K  ncepower
 nce40ed120vt.pdf

NCE40ED120VT 1200V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC =

 9.52. Size:673K  ncepower
 nce40td60bp nce40td60bt.pdf

PbFreeProduct NCE40TD60BP,NCE40TD60BT 600V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat H

 9.53. Size:371K  ncepower
 nce40p05s.pdf

Pb Free Product http //www.ncepower.com NCE40P05S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P05S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-5.3A RDS(ON)

 9.54. Size:1431K  ncepower
 nce40t120wd.pdf

 9.55. Size:361K  ncepower
 nce40p40l.pdf

 9.56. Size:392K  ncepower
 nce40h12i.pdf

Pb Free Product NCE40H12I http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)

 9.57. Size:357K  ncepower
 nce40td120lt.pdf

PbFreeProduct NCE40TD120LT 1200V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw

 9.58. Size:704K  ncepower
 nce40ed65bf.pdf

NCE40ED65BF 650V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.50V(Typ.) @ IC = 40

 9.59. Size:472K  ncepower
 nce40td120vtp.pdf

PbFreeProduct NCE40TD120VTP 1200V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed s

 9.60. Size:401K  ncepower
 nce40h30d.pdf

http //www.ncepower.com NCE40H30D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H30D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V ,ID =300A RDS(ON)

 9.61. Size:1851K  ncepower
 nce40td65bp.pdf

 9.62. Size:556K  ncepower
 nce40p06j.pdf

http //www.ncepower.com NCE40P06J NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P06J uses advanced trench technology to provide D excellent R , low gate charge and operation with gate DS(ON) G voltages .This device is suitable for use as a load switching application and a wide variety of other applications. S Schematic diagram General Features V = -40V,I = -

 9.63. Size:1395K  ncepower
 nce40er65bp.pdf

Pb Free Product NCE40ER65BP 650V, 40A, Trench FS III Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS III IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSIII Technology offering Very low V CE(sat) High speed switching

 9.64. Size:336K  ncepower
 nce40h20a.pdf

Pb Free Product http //www.ncepower.com NCE40H20A NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H20A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 40V,ID =200A RDS(ON)

 9.65. Size:358K  ncepower
 nce40td120ut.pdf

PbFreeProduct NCE40TD120UT 1200V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw

 9.66. Size:716K  ncepower
 nce40p30k.pdf

 9.67. Size:772K  ncepower
 nce40h14.pdf

NCE40H14 http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H14 uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =40V,I =140A DS D R

 9.68. Size:357K  ncepower
 nce40td135lt.pdf

PbFreeProduct NCE40TD135LT 1350V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1350V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw

 9.69. Size:431K  ncepower
 nce4060k.pdf

Pb Free Product NCE4060K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4060K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =60A RDS(ON)

 9.70. Size:1182K  ncepower
 nce40t120vt.pdf

 9.71. Size:683K  ncepower
 nce40p20q.pdf

http //www.ncepower.com NCE40P20Q NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P20Q uses advanced trench technology to provide General Features excellent R , This device is suitable for use as a load switch DS(ON) V = -40V,I = -20A DS D or power management. R

 9.72. Size:721K  ncepower
 nce40h11.pdf

Pb Free Product NCE40H11 http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H11 uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =40V,I =110A Schematic diagram DS D R

 9.73. Size:780K  ncepower
 nce40ed75vt.pdf

NCE40ED75VT 750V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.55V(Typ.) @ IC = 40

 9.74. Size:664K  ncepower
 nce40h12a.pdf

NCE40H12A http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12A uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =40V,I =120A DS D R

 9.75. Size:383K  ncepower
 nce40td135lp.pdf

PbFreeProduct NCE40TD135LP 1350V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1350V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw

 9.76. Size:2012K  ncepower
 nce40td60bt.pdf

 9.77. Size:383K  ncepower
 nce40h32ll.pdf

http //www.ncepower.com NCE40H32LL NCE N-Channel Enhancement Mode Power MOSFET Description General Features The NCE40H32LL uses advanced trench technology and VDS =40V ,ID =320A design to provide excellent RDS(ON) with low gate charge. It RDS(ON)

 9.78. Size:446K  ncepower
 nce40p07s.pdf

Pb Free Product http //www.ncepower.com NCE40P07S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P07S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-6.2A RDS(ON)

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 nce40p05y.pdf

NCE40P05Y www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-2