All MOSFET. NCE4090K Datasheet

 

NCE4090K MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE4090K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 59 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 296 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: TO252

 NCE4090K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE4090K Datasheet (PDF)

 ..1. Size:688K  ncepower
nce4090k.pdf

NCE4090K
NCE4090K

Pb Free ProductNCE4090Khttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE4090K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =40V,I =90ADS DSchematic diagramR =4.2m @ V =10V (Typ)DS(ON) GSR =7.2m @ V =4.5V (Typ)

 7.1. Size:352K  ncepower
nce4090g.pdf

NCE4090K
NCE4090K

Pb Free ProductNCE4090Ghttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4090G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =90A RDS(ON)

 9.1. Size:1165K  ncepower
nce40td120ww.pdf

NCE4090K
NCE4090K

Pb Free ProductNCE40TD120WW1200V, 40A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching

 9.2. Size:1433K  ncepower
nce40er65bpf.pdf

NCE4090K
NCE4090K

Pb Free ProductNCE40ER65BPF650V, 40A, Trench FS III Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FS III IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSIII Technology offering Very low VCE(sat) High speed switching

 9.3. Size:590K  ncepower
nce40th60bp.pdf

NCE4090K
NCE4090K

PbFreeProduct NCE40TH60BP 600V, 40A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High speed sw

 9.4. Size:397K  ncepower
nce40p70k.pdf

NCE4090K
NCE4090K

Pb Free Producthttp://www.ncepower.com NCE40P70KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P70K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-70A RDS(ON)

 9.5. Size:359K  ncepower
nce40td120bt.pdf

NCE4090K
NCE4090K

PbFreeProduct NCE40TD120BT 1200V, 40A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw

 9.6. Size:339K  ncepower
nce40h25ll.pdf

NCE4090K
NCE4090K

http://www.ncepower.com NCE40H25LLNCE N-Channel Enhancement Mode Power MOSFET General Features Description VDS =40V ,ID =250A The NCE40H25LL uses advanced trench technology and RDS(ON)

 9.7. Size:294K  ncepower
nce40p40d.pdf

NCE4090K
NCE4090K

Pb Free Producthttp://www.ncepower.com NCE40P40DNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P40D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-40A RDS(ON)

 9.8. Size:1873K  ncepower
nce40td65b.pdf

NCE4090K
NCE4090K

Pb Free ProductNCE40TD65B650V, 40A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FS II IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

 9.9. Size:783K  ncepower
nce40ed65bt.pdf

NCE4090K
NCE4090K

NCE40ED65BT650V 40A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.50V(Typ.) @ IC = 40

 9.10. Size:353K  ncepower
nce4080d.pdf

NCE4090K
NCE4090K

http://www.ncepower.com NCE4080DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE4080D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =80A Schematic diagram RDS(ON)

 9.11. Size:1817K  ncepower
nce40td60bp.pdf

NCE4090K
NCE4090K

Pb Free ProductNCE40TD60BP600V, 40A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 600V Trench FS II IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

 9.12. Size:1119K  ncepower
nce40ed65vt.pdf

NCE4090K
NCE4090K

NCE40ED65VT650V 40A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ IC = 40

 9.13. Size:480K  ncepower
nce40td120vt.pdf

NCE4090K
NCE4090K

PbFreeProduct NCE40TD120VT 1200V, 40A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw

 9.14. Size:669K  ncepower
nce40h10k.pdf

NCE4090K
NCE4090K

NCE40H10Khttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40H10K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =40V,I =100ADS DSchematic diagramR

 9.15. Size:753K  ncepower
nce40h11k.pdf

NCE4090K
NCE4090K

Pb Free ProductNCE40H11Khttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40H11K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =40V,I =110ADS DSchematic diagramR

 9.16. Size:337K  ncepower
nce4060i.pdf

NCE4090K
NCE4090K

Pb Free ProductNCE4060Ihttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4060I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =60A RDS(ON)

 9.17. Size:368K  ncepower
nce4009s.pdf

NCE4090K
NCE4090K

Pb Free Producthttp://www.ncepower.com NCE4009S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4009S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Schematic diagram General Features N-Channel VDS =4

 9.18. Size:372K  ncepower
nce40td120wt.pdf

NCE4090K
NCE4090K

PbFreeProduct NCE40TD120WT 1200V, 40A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw

 9.19. Size:420K  ncepower
nce4012s.pdf

NCE4090K
NCE4090K

Pb Free ProductNCE4012Shttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4012S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =12A Schematic diagram RDS(ON)

 9.20. Size:470K  ncepower
nce40p40k.pdf

NCE4090K
NCE4090K

Pb Free Producthttp://www.ncepower.com NCE40P40KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P40K uses advanced trench technology and design to provide excellent RDS(ON) with low gatecharge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-40A Schematic diagram RDS(ON)

 9.21. Size:293K  ncepower
nce40p05y.pdf

NCE4090K
NCE4090K

Pb Free Producthttp://www.ncepower.com NCE40P05YNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P05Y uses advanced trench technology and Ddesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GGeneral Features VDS =-40V,ID =-5.3A SRDS(ON)

 9.22. Size:428K  ncepower
nce4080k.pdf

NCE4090K
NCE4090K

Pb Free ProductNCE4080Khttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =80A RDS(ON)

 9.23. Size:401K  ncepower
nce40h12.pdf

NCE4090K
NCE4090K

Pb Free ProductNCE40H12http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)

 9.24. Size:613K  ncepower
nce4015s.pdf

NCE4090K
NCE4090K

NCE4015Shttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE4015S uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =40V,I =15A Schematic diagramDS DR

 9.25. Size:637K  ncepower
nce40p25g.pdf

NCE4090K
NCE4090K

http://www.ncepower.comNCE40P25GNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40P25G uses uses advanced trench technology toGeneral Featuresprovide excellent R , This device is suitable for use as a load V =-40V,I =-25ADS(ON) DS Dswitch or power management. R =11.5m (typical) @ V =10VDS(ON) GSR =18.5m (typical) @ V =4.5VApplication DS(ON) GS DC/

 9.26. Size:1032K  ncepower
nce40th60bpf.pdf

NCE4090K
NCE4090K

Pb Free ProductNCE40TH60BPF600V, 40A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 600V Trench FS II IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCEsat High speed switchin

 9.27. Size:389K  ncepower
nce40td65bt.pdf

NCE4090K
NCE4090K

PbFreeProduct NCE40TD65BT 650V, 40A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High sp

 9.28. Size:1203K  ncepower
nce40ed120vtp.pdf

NCE4090K
NCE4090K

NCE40ED120VTP1200V 40A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation;Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage: V = 1.65V(Typ.) @ IC

 9.29. Size:398K  ncepower
nce40h29d.pdf

NCE4090K
NCE4090K

Pb Free Producthttp://www.ncepower.com NCE40H29DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H29D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V ,ID =290A RDS(ON)

 9.30. Size:396K  ncepower
nce40p06s.pdf

NCE4090K
NCE4090K

Pb Free Producthttp://www.ncepower.com NCE40P06SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-6A RDS(ON)

 9.31. Size:402K  ncepower
nce40p13s.pdf

NCE4090K
NCE4090K

Pb Free Producthttp://www.ncepower.com NCE40P13SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P13S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-13A RDS(ON)

 9.32. Size:1086K  ncepower
nce40th60bt.pdf

NCE4090K
NCE4090K

Pb Free ProductNCE40TH60BT600V, 40A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 600V Trench FS II IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCEsat High speed switching

 9.33. Size:719K  ncepower
nce40p20q1.pdf

NCE4090K
NCE4090K

http://www.ncepower.comNCE40P20Q1NCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40P20Q1 uses advanced trench technology to provideGeneral Featuresexcellent R , This device is suitable for use as a load switchDS(ON) V = -40V,I = -20ADS Dor power management.R

 9.34. Size:983K  ncepower
nce40np2815g.pdf

NCE4090K
NCE4090K

NCE40NP2815Ghttp://www.ncepower.comNCE N&P-Channel complementary Power MOSFETDescriptionThe NCE40NP2815G uses advanced trench technologyand design to provide excellent R with low gateDS(ON)charge. It can be used in a wide variety of applications.General FeaturesSchematic diagramN channel V =40V,I =28ADS DR

 9.35. Size:361K  ncepower
nce40h21.pdf

NCE4090K
NCE4090K

Pb Free Producthttp://www.ncepower.com NCE40H21NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V ,ID =210A Schematic diagram RDS(ON)

 9.36. Size:776K  ncepower
nce40eu65ut.pdf

NCE4090K
NCE4090K

NCE40EU65UT650V 40A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.80V(Typ.) @ IC = 40

 9.37. Size:656K  ncepower
nce4005.pdf

NCE4090K
NCE4090K

http://www.ncepower.comNCE4005NCE N-Channel Enhancement Mode Power MOSFETDDescriptionThe NCE4005 uses advanced trench technology to provideGexcellent R , low gate charge. This device is suitable forDS(ON)use as a Battery protection or in other switching application.SGeneral FeaturesSchematic Diagram V =40V,I =5ADS DR = 22m @ V =10V(Typ)DS(ON) GSR = 36m @

 9.38. Size:655K  ncepower
nce40nd25q.pdf

NCE4090K
NCE4090K

http://www.ncepower.comNCE40ND25QNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40ND25Q uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =40V,I =25A Schematic DiagramDS DR =13.2m @ V =10VDS(ON) GSR =18m @ V =4.5VDS(ON) GS High densi

 9.39. Size:696K  ncepower
nce4003a.pdf

NCE4090K
NCE4090K

http://www.ncepower.comNCE4003ANCE N-Channel Enhancement Mode Power MOSFETDDescriptionThe NCE4003A uses advanced trench technology to provideGexcellent R , low gate charge. This device is suitable forDS(ON)use as a Battery protection or in other switching application.SGeneral FeaturesSchematic Diagram V =40V,I =3ADS DR = 32m @ V =10V(Typ)DS(ON) GSR = 43m

 9.40. Size:530K  ncepower
nce40nd0812s.pdf

NCE4090K
NCE4090K

Pb Free ProductNCE40ND0812Shttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40ND0812S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =40V,ID =8A VDS =40V,ID =12A RDS(ON)

 9.41. Size:390K  ncepower
nce4080.pdf

NCE4090K
NCE4090K

Pb Free ProductNCE4080http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4080 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =80A RDS(ON)

 9.42. Size:458K  ncepower
nce40h12k.pdf

NCE4090K
NCE4090K

Pb Free ProductNCE40H12Khttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)

 9.43. Size:742K  ncepower
nce40p15q.pdf

NCE4090K
NCE4090K

http://www.ncepower.comNCE40P15QNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40P15Q uses advanced trench technology to provideGeneral Featuresexcellent R , This device is suitable for use as a load switchDS(ON) V = -40V,I = -15ADS Dor power management.R

 9.44. Size:383K  ncepower
nce40td120lp.pdf

NCE4090K
NCE4090K

PbFreeProduct NCE40TD120LP 1200V, 40A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw

 9.45. Size:1416K  ncepower
nce40er65bt.pdf

NCE4090K
NCE4090K

Pb Free ProductNCE40ER65BT650V, 40A, Trench FS III Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FS III IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSIII Technology offering Very low VCE(sat) High speed switching

 9.46. Size:681K  ncepower
nce4003.pdf

NCE4090K
NCE4090K

http://www.ncepower.comNCE4003NCE N-Channel Enhancement Mode Power MOSFETDDescriptionThe NCE4003 uses advanced trench technology to provideGexcellent R , low gate charge. This device is suitable forDS(ON)use as a Battery protection or in other switching application.SGeneral FeaturesSchematic Diagram V =40V,I =3ADS DR = 33m @ V =10V(Typ)DS(ON) GSR = 52m @

 9.47. Size:1870K  ncepower
nce40td60bpf.pdf

NCE4090K
NCE4090K

Pb Free ProductNCE40TD60BPF600V, 40A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 600V Trench FS II IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

 9.48. Size:510K  ncepower
nce40t60bp.pdf

NCE4090K
NCE4090K

PbFreeProduct NCE40T60BP 600V, 40A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High speed swi

 9.49. Size:476K  ncepower
nce40ts120vtp.pdf

NCE4090K
NCE4090K

PbFreeProduct NCE40TS120VTP 1200V, 40A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed s

 9.50. Size:349K  ncepower
nce40p15k.pdf

NCE4090K
NCE4090K

NCE40P15Khttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-40V,ID =-15A RDS(ON)

 9.51. Size:1189K  ncepower
nce40ed120vt.pdf

NCE4090K
NCE4090K

NCE40ED120VT1200V 40A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation;Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage: V = 1.65V(Typ.) @ IC =

 9.52. Size:673K  ncepower
nce40td60bp nce40td60bt.pdf

NCE4090K
NCE4090K

PbFreeProduct NCE40TD60BP,NCE40TD60BT 600V, 40A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat H

 9.53. Size:371K  ncepower
nce40p05s.pdf

NCE4090K
NCE4090K

Pb Free Producthttp://www.ncepower.com NCE40P05SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P05S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-5.3A RDS(ON)

 9.54. Size:1431K  ncepower
nce40t120wd.pdf

NCE4090K
NCE4090K

Pb Free ProductNCE40T120WD1200V, 40A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching

 9.55. Size:361K  ncepower
nce40p40l.pdf

NCE4090K
NCE4090K

http://www.ncepower.com NCE40P40LNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P40L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-40A RDS(ON)

 9.56. Size:392K  ncepower
nce40h12i.pdf

NCE4090K
NCE4090K

Pb Free ProductNCE40H12Ihttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)

 9.57. Size:357K  ncepower
nce40td120lt.pdf

NCE4090K
NCE4090K

PbFreeProduct NCE40TD120LT 1200V, 40A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw

 9.58. Size:704K  ncepower
nce40ed65bf.pdf

NCE4090K
NCE4090K

NCE40ED65BF650V 40A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.50V(Typ.) @ IC = 40

 9.59. Size:472K  ncepower
nce40td120vtp.pdf

NCE4090K
NCE4090K

PbFreeProduct NCE40TD120VTP 1200V, 40A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed s

 9.60. Size:401K  ncepower
nce40h30d.pdf

NCE4090K
NCE4090K

http://www.ncepower.com NCE40H30DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H30D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V ,ID =300A RDS(ON)

 9.61. Size:1851K  ncepower
nce40td65bp.pdf

NCE4090K
NCE4090K

Pb Free ProductNCE40TD65BP650V, 40A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FS II IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

 9.62. Size:556K  ncepower
nce40p06j.pdf

NCE4090K
NCE4090K

http://www.ncepower.comNCE40P06JNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40P06J uses advanced trench technology to provideDexcellent R , low gate charge and operation with gateDS(ON)Gvoltages .This device is suitable for use as a load switchingapplication and a wide variety of other applications.SSchematic diagramGeneral Features V = -40V,I = -

 9.63. Size:1395K  ncepower
nce40er65bp.pdf

NCE4090K
NCE4090K

Pb Free ProductNCE40ER65BP650V, 40A, Trench FS III Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FS III IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSIII Technology offering Very low VCE(sat) High speed switching

 9.64. Size:336K  ncepower
nce40h20a.pdf

NCE4090K
NCE4090K

Pb Free Producthttp://www.ncepower.com NCE40H20ANCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H20A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 40V,ID =200A RDS(ON)

 9.65. Size:358K  ncepower
nce40td120ut.pdf

NCE4090K
NCE4090K

PbFreeProduct NCE40TD120UT 1200V, 40A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw

 9.66. Size:716K  ncepower
nce40p30k.pdf

NCE4090K
NCE4090K

http://www.ncepower.comNCE40P30KNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40P30K uses advanced trench technology anddesign to provide excellent R with low gate charge .ThisDS(ON)device is well suited for high current load applications.General Features V =-40V,I =-30A Schematic diagramDS DR

 9.67. Size:772K  ncepower
nce40h14.pdf

NCE4090K
NCE4090K

NCE40H14http://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40H14 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =40V,I =140ADS DR

 9.68. Size:357K  ncepower
nce40td135lt.pdf

NCE4090K
NCE4090K

PbFreeProduct NCE40TD135LT 1350V, 40A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1350V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw

 9.69. Size:431K  ncepower
nce4060k.pdf

NCE4090K
NCE4090K

Pb Free ProductNCE4060Khttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4060K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =60A RDS(ON)

 9.70. Size:1182K  ncepower
nce40t120vt.pdf

NCE4090K
NCE4090K

Pb Free ProductNCE40T120VT1200V, 40A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching

 9.71. Size:683K  ncepower
nce40p20q.pdf

NCE4090K
NCE4090K

http://www.ncepower.comNCE40P20QNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40P20Q uses advanced trench technology to provideGeneral Featuresexcellent R , This device is suitable for use as a load switchDS(ON) V = -40V,I = -20ADS Dor power management.R

 9.72. Size:721K  ncepower
nce40h11.pdf

NCE4090K
NCE4090K

Pb Free ProductNCE40H11http://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40H11 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =40V,I =110A Schematic diagramDS DR

 9.73. Size:780K  ncepower
nce40ed75vt.pdf

NCE4090K
NCE4090K

NCE40ED75VT750V 40A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.55V(Typ.) @ IC = 40

 9.74. Size:664K  ncepower
nce40h12a.pdf

NCE4090K
NCE4090K

NCE40H12Ahttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40H12A uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =40V,I =120ADS DR

 9.75. Size:383K  ncepower
nce40td135lp.pdf

NCE4090K
NCE4090K

PbFreeProduct NCE40TD135LP 1350V, 40A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1350V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw

 9.76. Size:2012K  ncepower
nce40td60bt.pdf

NCE4090K
NCE4090K

Pb Free ProductNCE40TD60BT600V, 40A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 600V Trench FS II IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

 9.77. Size:383K  ncepower
nce40h32ll.pdf

NCE4090K
NCE4090K

http://www.ncepower.com NCE40H32LLNCE N-Channel Enhancement Mode Power MOSFET Description General Features The NCE40H32LL uses advanced trench technology and VDS =40V ,ID =320A design to provide excellent RDS(ON) with low gate charge. It RDS(ON)

 9.78. Size:446K  ncepower
nce40p07s.pdf

NCE4090K
NCE4090K

Pb Free Producthttp://www.ncepower.com NCE40P07SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P07S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-6.2A RDS(ON)

 9.79. Size:869K  cn vbsemi
nce40p05y.pdf

NCE4090K
NCE4090K

NCE40P05Ywww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-2

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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