NCE40H10K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE40H10K

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 105 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16 nS

Cossⓘ - Capacitancia de salida: 405 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0088 Ohm

Encapsulados: TO-252

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NCE40H10K datasheet

 ..1. Size:669K  ncepower
 nce40h10k.pdf pdf_icon

NCE40H10K

NCE40H10K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H10K uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =40V,I =100A DS D Schematic diagram R

 7.1. Size:753K  ncepower
 nce40h11k.pdf pdf_icon

NCE40H10K

Pb Free Product NCE40H11K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H11K uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =40V,I =110A DS D Schematic diagram R

 7.2. Size:401K  ncepower
 nce40h12.pdf pdf_icon

NCE40H10K

Pb Free Product NCE40H12 http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)

 7.3. Size:458K  ncepower
 nce40h12k.pdf pdf_icon

NCE40H10K

MOSTRAR MÁS

Otros transistores... NCE3N170F, NCE3N170PF, NCE3N170T, NCE4003, NCE4005, NCE4015S, NCE4090G, NCE4090K, IRF830, NCE40H11, NCE40H11K, NCE40H12A, NCE40H25LL, NCE40H30D, NCE40H32LL, NCE40NP2815G, NCE40P06J