NCE40H10K MOSFET Datasheet: N-Ch, 40V, 100A. Full specification with pinout and replacement list

NCE40H10K Specs and Replacement

Type Designator: NCE40H10K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 105 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 405 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm

Package: TO-252

NCE40H10K substitution

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NCE40H10K datasheet

..1. Size:669K ncepower
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NCE40H10K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H10K uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =40V,I =100A DS D Schematic diagram R ... See More ⇒

7.1. Size:753K ncepower
nce40h11k.pdf pdf_icon

Pb Free Product NCE40H11K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H11K uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =40V,I =110A DS D Schematic diagram R ... See More ⇒

7.2. Size:401K ncepower
nce40h12.pdf pdf_icon

Pb Free Product NCE40H12 http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON) ... See More ⇒

7.3. Size:458K ncepower
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