NCE40H12A Todos los transistores

 

NCE40H12A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE40H12A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 130 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 114 nC
   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 562 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0037 Ohm
   Paquete / Cubierta: TO220
 

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NCE40H12A Datasheet (PDF)

 ..1. Size:664K  ncepower
 nce40h12a.pdf pdf_icon

NCE40H12A

NCE40H12Ahttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40H12A uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =40V,I =120ADS DR

 6.1. Size:401K  ncepower
 nce40h12.pdf pdf_icon

NCE40H12A

Pb Free ProductNCE40H12http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)

 6.2. Size:458K  ncepower
 nce40h12k.pdf pdf_icon

NCE40H12A

Pb Free ProductNCE40H12Khttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)

 6.3. Size:392K  ncepower
 nce40h12i.pdf pdf_icon

NCE40H12A

Pb Free ProductNCE40H12Ihttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE4003 , NCE4005 , NCE4015S , NCE4090G , NCE4090K , NCE40H10K , NCE40H11 , NCE40H11K , 8N60 , NCE40H25LL , NCE40H30D , NCE40H32LL , NCE40NP2815G , NCE40P06J , NCE40P06S , NCE40P15Q , NCE40P20Q .

 

 
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