NCE4435B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE4435B
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 3 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 12 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.2 V
Carga de la puerta (Qg): 41.5 nC
Tiempo de subida (tr): 10 nS
Conductancia de drenaje-sustrato (Cd): 217 pF
Resistencia entre drenaje y fuente RDS(on): 0.016 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de MOSFET NCE4435B
NCE4435B Datasheet (PDF)
nce4435b.pdf
http://www.ncepower.comNCE4435BNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE4435B uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 4.5V. This device is suitable for use as aload switch or in PWM applications.General Features V = -30V,I = -12A Schematic diagramDS DR
nce4435.pdf
Pb Free ProductNCE4435NCE P-Channel Enhancement Mode Power MOSFET DDescription The NCE4435 uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SGeneral Features Schematic diagram VDS = -30V,ID = -9.1A RDS(ON)
nce4435x.pdf
http://www.ncepower.com NCE4435XNCE P-Channel Enhancement Mode Power MOSFET Description The NCE4435X uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = -30V,ID = -10A RDS(ON)
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
