NCE4528K Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE4528K  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 45 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 28 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 109 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm

Encapsulados: TO-252

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NCE4528K datasheet

 ..1. Size:627K  ncepower
 nce4528k.pdf pdf_icon

NCE4528K

NCE4528K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4528K uses advanced trench technology to provide excellent R and low gate charge . The complementary DS(ON) MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Schematic diagram General Features N-Channel V =45V,I =28A DS D R

 8.1. Size:538K  ncepower
 nce4525.pdf pdf_icon

NCE4528K

Pb Free Product http //www.ncepower.com NCE4525 N and P-Channel Enhancement Mode Power MOSFET Description The NCE4525 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS =

 9.1. Size:434K  ncepower
 nce4558k.pdf pdf_icon

NCE4528K

Pb Free Product NCE4558K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4558K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =45V,ID =58A RDS(ON)

 9.2. Size:623K  ncepower
 nce4555k.pdf pdf_icon

NCE4528K

Pb Free Product NCE4555K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4555K uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =45V,I =55A DS D Schematic diagram R =9.2m @ V =10V (Typ) DS(ON) GS R =13m @ V =4.5V (Typ)

MOSTRAR MÁS

Otros transistores... NCE40P20Q, NCE40P20Q1, NCE40P25G, NCE40P30K, NCE40P40D, NCE4435B, NCE4435X, NCE4525, 20N60, NCE4555K, NCE4558K, NCE4606B, NCE5015S, NCE5020Q, NCE5055K, NCE5080K, NCE50N1K2K