NCE4528K MOSFET PDF: N-Ch, 45V, 28A. Datasheet. Full specification with pinout and replacement list

NCE4528K Specs and Replacement

   Type Designator: NCE4528K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 28 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 109 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO-252

NCE4528K substitution

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NCE4528K datasheet

..1. Size:627K ncepower
nce4528k.pdf pdf_icon

NCE4528K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4528K uses advanced trench technology to provide excellent R and low gate charge . The complementary DS(ON) MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Schematic diagram General Features N-Channel V =45V,I =28A DS D R ... See More ⇒

8.1. Size:538K ncepower
nce4525.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCE4525 N and P-Channel Enhancement Mode Power MOSFET Description The NCE4525 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS = ... See More ⇒

9.1. Size:434K ncepower
nce4558k.pdf pdf_icon

Pb Free Product NCE4558K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4558K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =45V,ID =58A RDS(ON) ... See More ⇒

9.2. Size:623K ncepower
nce4555k.pdf pdf_icon

Pb Free Product NCE4555K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4555K uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =45V,I =55A DS D Schematic diagram R =9.2m @ V =10V (Typ) DS(ON) GS R =13m @ V =4.5V (Typ) ... See More ⇒