NCE4555K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE4555K
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 75 W
Voltaje máximo drenador - fuente |Vds|: 45 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 55 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 32.5 nC
Tiempo de subida (tr): 17 nS
Conductancia de drenaje-sustrato (Cd): 135 pF
Resistencia entre drenaje y fuente RDS(on): 0.017 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET NCE4555K
NCE4555K Datasheet (PDF)
nce4555k.pdf
Pb Free ProductNCE4555Khttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE4555K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =45V,I =55ADS DSchematic diagramR =9.2m @ V =10V (Typ)DS(ON) GSR =13m @ V =4.5V (Typ)
nce4558k.pdf
Pb Free ProductNCE4558Khttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4558K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =45V,ID =58A RDS(ON)
nce4525.pdf
Pb Free Producthttp://www.ncepower.com NCE4525N and P-Channel Enhancement Mode Power MOSFET Description The NCE4525 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS =
nce4528k.pdf
NCE4528Khttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE4528K uses advanced trench technology to provideexcellent R and low gate charge . The complementaryDS(ON)MOSFETs may be used to form a level shifted high sideswitch, and for a host of other applications.Schematic diagramGeneral Features N-ChannelV =45V,I =28ADS DR
nce4503s.pdf
Pb Free Producthttp://www.ncepower.com NCE4503SN and P-Channel Enhancement Mode Power MOSFET Description The NCE4503S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The SOP-8 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage applications such as DC/DC converters. N-channel
nce4503s.pdf
NCE4503Swww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = 10 V 11 100 % Rg and UIS TestedN-Channel 30 13.3 Compliant to RoHS Directive 2002/95/EC0.013 at VGS = 4.5 V 10APPLICATIONS0.021 at VGS = - 10 V
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
