NCE4606B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE4606B

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2.5 nS

Cossⓘ - Capacitancia de salida: 75 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.044 Ohm

Encapsulados: SOP8

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NCE4606B datasheet

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 nce4606b.pdf pdf_icon

NCE4606B

http //www.ncepower.com NCE4606B N and P-Channel Enhancement Mode Power MOSFET Description The NCE4606B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. N-channel P-channel General Features N-Channel Schematic diagram VDS

 7.1. Size:423K  ncepower
 nce4606a.pdf pdf_icon

NCE4606B

http //www.ncepower.com NCE4606A N and P-Channel Enhancement Mode Power MOSFET Description The NCE4606A uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5A Sc

 7.2. Size:1122K  ncepower
 nce4606c.pdf pdf_icon

NCE4606B

http //www.ncepower.com NCE4606C N and P-Channel Enhancement Mode Power MOSFET Description The NCE4606C uses advanced trench technology to provide excellent R and low gate charge . The complementary DS(ON) MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. N-channel P-channel General Features N-Channel Schematic diagram V = 30V,I

 7.3. Size:434K  ncepower
 nce4606.pdf pdf_icon

NCE4606B

Pb Free Product http //www.ncepower.com NCE4606 N and P-Channel Enhancement Mode Power MOSFET Description The NCE4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS =

MOSTRAR MÁS

Otros transistores... NCE40P30K, NCE40P40D, NCE4435B, NCE4435X, NCE4525, NCE4528K, NCE4555K, NCE4558K, 50N06, NCE5015S, NCE5020Q, NCE5055K, NCE5080K, NCE50N1K2K, NCE50N1K8D, NCE50N1K8F, NCE50N1K8I