NCE4606B Datasheet. Specs and Replacement

Type Designator: NCE4606B  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.5 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm

Package: SOP8

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NCE4606B datasheet

 ..1. Size:397K  ncepower
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NCE4606B

http //www.ncepower.com NCE4606B N and P-Channel Enhancement Mode Power MOSFET Description The NCE4606B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. N-channel P-channel General Features N-Channel Schematic diagram VDS... See More ⇒

 7.1. Size:423K  ncepower
nce4606a.pdf pdf_icon

NCE4606B

http //www.ncepower.com NCE4606A N and P-Channel Enhancement Mode Power MOSFET Description The NCE4606A uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5A Sc... See More ⇒

 7.2. Size:1122K  ncepower
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NCE4606B

http //www.ncepower.com NCE4606C N and P-Channel Enhancement Mode Power MOSFET Description The NCE4606C uses advanced trench technology to provide excellent R and low gate charge . The complementary DS(ON) MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. N-channel P-channel General Features N-Channel Schematic diagram V = 30V,I ... See More ⇒

 7.3. Size:434K  ncepower
nce4606.pdf pdf_icon

NCE4606B

Pb Free Product http //www.ncepower.com NCE4606 N and P-Channel Enhancement Mode Power MOSFET Description The NCE4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS = ... See More ⇒

Detailed specifications: NCE40P30K, NCE40P40D, NCE4435B, NCE4435X, NCE4525, NCE4528K, NCE4555K, NCE4558K, IRF540N, NCE5015S, NCE5020Q, NCE5055K, NCE5080K, NCE50N1K2K, NCE50N1K8D, NCE50N1K8F, NCE50N1K8I

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.