NCE5015S Todos los transistores

 ..1. Size:400K  ncepower
 nce5015s.pdf

 9.1. Size:793K  ncepower
 nce50nf600k.pdf

NCE50NF600K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 520 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind

 9.2. Size:812K  ncepower
 nce50nf180.pdf

NCE50NF180 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 150 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 17 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and indust

 9.3. Size:797K  ncepower
 nce50nf180i.pdf

NCE50NF180I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 150 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 17 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and indus

 9.4. Size:760K  ncepower
 nce50n2k2f.pdf

NCE50N2K2F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 2000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.4 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and ind

 9.5. Size:786K  ncepower
 nce50nf520k.pdf

NCE50NF520K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7.2 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 10 nC power conversion, and indu

 9.6. Size:271K  ncepower
 nce5020q.pdf

Pb Free Product http //www.ncepower.com NCE5020Q NCE N-Channel Enhancement Mode Power MOSFET Description The NCE5020Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =50V,ID =20A Schematic diagram RDS(ON)

 9.7. Size:1491K  ncepower
 nce50td120bt.pdf

Pb Free Product NCE50TD120BT 1200V, 50A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching

 9.8. Size:1161K  ncepower
 nce50ed120vt.pdf

NCE50ED120VT 1200V 50A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC =

 9.9. Size:784K  ncepower
 nce50nf330i.pdf

NCE50NF330I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 280 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.5 nC power conversion, and ind

 9.10. Size:716K  ncepower
 nce50nf130v.pdf

NCE50NF130V N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 23.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 24.5 nC power conversion, and i

 9.11. Size:438K  ncepower
 nce5055k.pdf

 9.12. Size:853K  ncepower
 nce50nf220f.pdf

NCE50NF220F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and ind

 9.13. Size:787K  ncepower
 nce50nf600i.pdf

NCE50NF600I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 520 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind

 9.14. Size:784K  ncepower
 nce50nf220k.pdf

NCE50NF220K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and ind

 9.15. Size:794K  ncepower
 nce50nf520.pdf

NCE50NF520 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7.2 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 10 nC power conversion, and indus

 9.16. Size:778K  ncepower
 nce50nf220i.pdf

NCE50NF220I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and ind

 9.17. Size:820K  ncepower
 nce50n1k8f.pdf

NCE50N1K8F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 3.3 nC power conversion, and ind

 9.18. Size:807K  ncepower
 nce50n1k8k.pdf

NCE50N1K8K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 3.3 nC power conversion, and ind

 9.19. Size:712K  ncepower
 nce50nf130f.pdf

NCE50NF130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 23.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 24.5 nC power conversion, and i

 9.20. Size:815K  ncepower
 nce50nf220d.pdf

NCE50NF220D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and ind

 9.21. Size:1676K  ncepower
 nce50td120vt.pdf

Pb Free Product NCE50TD120VT 1200V, 50A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching

 9.22. Size:800K  ncepower
 nce50n1k2k.pdf

NCE50N1K2K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1050 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and indus

 9.23. Size:722K  ncepower
 nce50nf130k.pdf

NCE50NF130K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 23.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 24.5 nC power conversion, and i

 9.24. Size:816K  ncepower
 nce50nf520d.pdf

NCE50NF520D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7.2 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 10 nC power conversion, and indu

 9.25. Size:1564K  ncepower
 nce50td120vtp.pdf

Pb Free Product NCE50TD120VTP 1200V, 50A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching

 9.26. Size:744K  ncepower
 nce50nf130ll.pdf

NCE50NF130LL N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 23.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 24.5 nC power conversion, and

 9.27. Size:809K  ncepower
 nce50nf330f.pdf

NCE50NF330F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 280 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.5 nC power conversion, and ind

 9.28. Size:1416K  ncepower
 nce50td120bp.pdf

Pb Free Product NCE50TD120BP 1200V, 50A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching

 9.29. Size:804K  ncepower
 nce50nf180k.pdf

NCE50NF180K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 150 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 17 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and indus

 9.30. Size:823K  ncepower
 nce50n1k8i.pdf

NCE50N1K8I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 3.3 nC power conversion, and ind

 9.31. Size:728K  ncepower
 nce50nf130d.pdf

NCE50NF130D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 23.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 24.5 nC power conversion, and i

 9.32. Size:799K  ncepower
 nce50nf330.pdf

NCE50NF330 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 280 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.5 nC power conversion, and indu

 9.33. Size:753K  ncepower
 nce50n2k2r.pdf

NCE50N2K2R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 2000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.4 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and ind

 9.34. Size:740K  ncepower
 nce50n540k.pdf

NCE50N540K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 470 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 10 nC power conversion, and indus

 9.35. Size:1194K  ncepower
 nce50ed65vt.pdf

NCE50ED65VT 650V 50A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC = 50

 9.36. Size:823K  ncepower
 nce50nf600d.pdf

NCE50NF600D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 520 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind

 9.37. Size:780K  ncepower
 nce50nf520i.pdf

NCE50NF520I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7.2 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 10 nC power conversion, and indu

 9.38. Size:1468K  ncepower
 nce50td120ww.pdf

Pb Free Product NCE50TD120WW 1200V, 50A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching

 9.39. Size:821K  ncepower
 nce50nf330d.pdf

NCE50NF330D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 280 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.5 nC power conversion, and ind

 9.40. Size:705K  ncepower
 nce50n2k2i.pdf

NCE50N2K2I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 2000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.4 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and ind

 9.41. Size:444K  ncepower
 nce5080k.pdf

 9.42. Size:794K  ncepower
 nce50n540f.pdf

NCE50N540F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 470 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13.3 nC power conversion, and ind

 9.43. Size:741K  ncepower
 nce50n2k2d.pdf

NCE50N2K2D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 2000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.4 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and ind

 9.44. Size:1222K  ncepower
 nce50eu65ut.pdf

NCE50EU65UT 650V 50A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.80V(Typ.) @ IC = 50

 9.45. Size:801K  ncepower
 nce50nf180d.pdf

NCE50NF180D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 150 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 17 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and indus

 9.46. Size:712K  ncepower
 nce50n2k2k.pdf

NCE50N2K2K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 2000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.4 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and ind

 9.47. Size:838K  ncepower
 nce50n1k8d.pdf

NCE50N1K8D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 3.3 nC power conversion, and ind

 9.48. Size:1473K  ncepower
 nce50td120wt.pdf

Pb Free Product NCE50TD120WT 1200V, 50A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching

 9.49. Size:737K  ncepower
 nce50nf130t.pdf

NCE50NF130T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 23.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 24.5 nC power conversion, and i

 9.50. Size:795K  ncepower
 nce50nf220.pdf

NCE50NF220 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and indu

 9.51. Size:820K  ncepower
 nce50nf600r.pdf

NCE50NF600R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 520 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind

 9.52. Size:856K  ncepower
 nce50nf180f.pdf

NCE50NF180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 150 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 17 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and indus

 9.53. Size:1175K  ncepower
 nce50ed120vtp.pdf

NCE50ED120VTP 1200V 50A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC

 9.54. Size:820K  ncepower
 nce50n1k8r.pdf

NCE50N1K8R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 3.3 nC power conversion, and ind

 9.55. Size:791K  ncepower
 nce50nf330k.pdf

NCE50NF330K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 280 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.5 nC power conversion, and ind

 9.56. Size:805K  ncepower
 nce50nf520f.pdf

NCE50NF520F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7.2 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 10 nC power conversion, and indu

 9.57. Size:810K  ncepower
 nce50nf600f.pdf

NCE50NF600F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 520 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind