NCE5015S. Аналоги и основные параметры
Наименование производителя: NCE5015S
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 3 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 50 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 15 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 7 ns
Cossⓘ - Выходная емкость: 298 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm
Тип корпуса: SOP8
Аналог (замена) для NCE5015S
- подборⓘ MOSFET транзистора по параметрам
NCE5015S даташит
nce50nf600k.pdf
NCE50NF600K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 520 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind
nce50nf180.pdf
NCE50NF180 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 150 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 17 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and indust
nce50nf180i.pdf
NCE50NF180I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 150 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 17 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and indus
nce50n2k2f.pdf
NCE50N2K2F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 2000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.4 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and ind
nce50nf520k.pdf
NCE50NF520K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7.2 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 10 nC power conversion, and indu
nce5020q.pdf
Pb Free Product http //www.ncepower.com NCE5020Q NCE N-Channel Enhancement Mode Power MOSFET Description The NCE5020Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =50V,ID =20A Schematic diagram RDS(ON)
nce50td120bt.pdf
Pb Free Product NCE50TD120BT 1200V, 50A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching
nce50ed120vt.pdf
NCE50ED120VT 1200V 50A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC =
nce50nf330i.pdf
NCE50NF330I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 280 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.5 nC power conversion, and ind
nce50nf130v.pdf
NCE50NF130V N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 23.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 24.5 nC power conversion, and i
nce50nf220f.pdf
NCE50NF220F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and ind
nce50nf600i.pdf
NCE50NF600I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 520 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind
nce50nf220k.pdf
NCE50NF220K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and ind
nce50nf520.pdf
NCE50NF520 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7.2 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 10 nC power conversion, and indus
nce50nf220i.pdf
NCE50NF220I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and ind
nce50n1k8f.pdf
NCE50N1K8F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 3.3 nC power conversion, and ind
nce50n1k8k.pdf
NCE50N1K8K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 3.3 nC power conversion, and ind
nce50nf130f.pdf
NCE50NF130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 23.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 24.5 nC power conversion, and i
nce50nf220d.pdf
NCE50NF220D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and ind
nce50td120vt.pdf
Pb Free Product NCE50TD120VT 1200V, 50A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching
nce50n1k2k.pdf
NCE50N1K2K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1050 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and indus
nce50nf130k.pdf
NCE50NF130K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 23.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 24.5 nC power conversion, and i
nce50nf520d.pdf
NCE50NF520D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7.2 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 10 nC power conversion, and indu
nce50td120vtp.pdf
Pb Free Product NCE50TD120VTP 1200V, 50A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching
nce50nf130ll.pdf
NCE50NF130LL N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 23.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 24.5 nC power conversion, and
nce50nf330f.pdf
NCE50NF330F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 280 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.5 nC power conversion, and ind
nce50td120bp.pdf
Pb Free Product NCE50TD120BP 1200V, 50A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching
nce50nf180k.pdf
NCE50NF180K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 150 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 17 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and indus
nce50n1k8i.pdf
NCE50N1K8I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 3.3 nC power conversion, and ind
nce50nf130d.pdf
NCE50NF130D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 23.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 24.5 nC power conversion, and i
nce50nf330.pdf
NCE50NF330 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 280 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.5 nC power conversion, and indu
nce50n2k2r.pdf
NCE50N2K2R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 2000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.4 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and ind
nce50n540k.pdf
NCE50N540K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 470 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 10 nC power conversion, and indus
nce50ed65vt.pdf
NCE50ED65VT 650V 50A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC = 50
nce50nf600d.pdf
NCE50NF600D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 520 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind
nce50nf520i.pdf
NCE50NF520I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7.2 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 10 nC power conversion, and indu
nce50td120ww.pdf
Pb Free Product NCE50TD120WW 1200V, 50A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching
nce50nf330d.pdf
NCE50NF330D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 280 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.5 nC power conversion, and ind
nce50n2k2i.pdf
NCE50N2K2I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 2000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.4 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and ind
nce50n540f.pdf
NCE50N540F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 470 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13.3 nC power conversion, and ind
nce50n2k2d.pdf
NCE50N2K2D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 2000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.4 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and ind
nce50eu65ut.pdf
NCE50EU65UT 650V 50A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.80V(Typ.) @ IC = 50
nce50nf180d.pdf
NCE50NF180D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 150 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 17 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and indus
nce50n2k2k.pdf
NCE50N2K2K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 2000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.4 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and ind
nce50n1k8d.pdf
NCE50N1K8D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 3.3 nC power conversion, and ind
nce50td120wt.pdf
Pb Free Product NCE50TD120WT 1200V, 50A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching
nce50nf130t.pdf
NCE50NF130T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 23.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 24.5 nC power conversion, and i
nce50nf220.pdf
NCE50NF220 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and indu
nce50nf600r.pdf
NCE50NF600R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 520 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind
nce50nf180f.pdf
NCE50NF180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 150 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 17 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and indus
nce50ed120vtp.pdf
NCE50ED120VTP 1200V 50A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC
nce50n1k8r.pdf
NCE50N1K8R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 3.3 nC power conversion, and ind
nce50nf330k.pdf
NCE50NF330K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 280 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.5 nC power conversion, and ind
nce50nf520f.pdf
NCE50NF520F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7.2 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 10 nC power conversion, and indu
nce50nf600f.pdf
NCE50NF600F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 520 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind
Другие IGBT... NCE40P40D, NCE4435B, NCE4435X, NCE4525, NCE4528K, NCE4555K, NCE4558K, NCE4606B, IRFP460, NCE5020Q, NCE5055K, NCE5080K, NCE50N1K2K, NCE50N1K8D, NCE50N1K8F, NCE50N1K8I, NCE50N1K8K
History: CEP75N06 | IXTH12N90
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