NCE50N2K2I MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE50N2K2I

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 18 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 1.4 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 8.6 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.25 Ohm

Encapsulados: TO-251

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NCE50N2K2I datasheet

 ..1. Size:705K  ncepower
 nce50n2k2i.pdf pdf_icon

NCE50N2K2I

NCE50N2K2I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 2000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.4 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and ind

 5.1. Size:760K  ncepower
 nce50n2k2f.pdf pdf_icon

NCE50N2K2I

NCE50N2K2F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 2000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.4 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and ind

 5.2. Size:753K  ncepower
 nce50n2k2r.pdf pdf_icon

NCE50N2K2I

NCE50N2K2R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 2000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.4 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and ind

 5.3. Size:741K  ncepower
 nce50n2k2d.pdf pdf_icon

NCE50N2K2I

NCE50N2K2D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 2000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.4 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and ind

MOSTRAR MÁS

Otros transistores... NCE50N1K2K, NCE50N1K8D, NCE50N1K8F, NCE50N1K8I, NCE50N1K8K, NCE50N1K8R, NCE50N2K2D, NCE50N2K2F, AON6414A, NCE50N2K2K, NCE50N2K2R, NCE50N540K, NCE50NF130D, NCE50NF130F, NCE50NF130K, NCE50NF130LL, NCE50NF130T