NCE50N2K2I Todos los transistores

 

NCE50N2K2I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE50N2K2I
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 18 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.4 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 8.6 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.25 Ohm
   Paquete / Cubierta: TO-251
 

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NCE50N2K2I Datasheet (PDF)

 ..1. Size:705K  ncepower
 nce50n2k2i.pdf pdf_icon

NCE50N2K2I

NCE50N2K2IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 2000 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.4 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 4.2 nCpower conversion, and ind

 5.1. Size:760K  ncepower
 nce50n2k2f.pdf pdf_icon

NCE50N2K2I

NCE50N2K2FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 2000 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.4 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 4.2 nCpower conversion, and ind

 5.2. Size:753K  ncepower
 nce50n2k2r.pdf pdf_icon

NCE50N2K2I

NCE50N2K2RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 2000 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.4 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 4.2 nCpower conversion, and ind

 5.3. Size:741K  ncepower
 nce50n2k2d.pdf pdf_icon

NCE50N2K2I

NCE50N2K2DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 2000 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.4 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 4.2 nCpower conversion, and ind

MOSTRAR MÁS

Otros transistores... NCE50N1K2K , NCE50N1K8D , NCE50N1K8F , NCE50N1K8I , NCE50N1K8K , NCE50N1K8R , NCE50N2K2D , NCE50N2K2F , IRFB4110 , NCE50N2K2K , NCE50N2K2R , NCE50N540K , NCE50NF130D , NCE50NF130F , NCE50NF130K , NCE50NF130LL , NCE50NF130T .

History: NVBG080N120SC1 | ME2305 | IRFH5303 | 2SJ347 | SIR820DP | ST3400S23RG | MS20N04NE

 

 
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