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NCE50N2K2I Specs and Replacement


   Type Designator: NCE50N2K2I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 18 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.4 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 8.6 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.25 Ohm
   Package: TO-251
 

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NCE50N2K2I datasheet

 ..1. Size:705K  ncepower
 nce50n2k2i.pdf pdf_icon

NCE50N2K2I

NCE50N2K2I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 2000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.4 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and ind... See More ⇒

 5.1. Size:760K  ncepower
 nce50n2k2f.pdf pdf_icon

NCE50N2K2I

NCE50N2K2F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 2000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.4 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and ind... See More ⇒

 5.2. Size:753K  ncepower
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NCE50N2K2I

NCE50N2K2R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 2000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.4 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and ind... See More ⇒

 5.3. Size:741K  ncepower
 nce50n2k2d.pdf pdf_icon

NCE50N2K2I

NCE50N2K2D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 2000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.4 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and ind... See More ⇒

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Detailed specifications: NCE50N1K2K , NCE50N1K8D , NCE50N1K8F , NCE50N1K8I , NCE50N1K8K , NCE50N1K8R , NCE50N2K2D , NCE50N2K2F , AON6414A , NCE50N2K2K , NCE50N2K2R , NCE50N540K , NCE50NF130D , NCE50NF130F , NCE50NF130K , NCE50NF130LL , NCE50NF130T .

Keywords - NCE50N2K2I MOSFET specs

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