NCE50NF130F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE50NF130F

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 34.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 23.5 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 630 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm

Encapsulados: TO220F

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NCE50NF130F datasheet

 ..1. Size:712K  ncepower
 nce50nf130f.pdf pdf_icon

NCE50NF130F

NCE50NF130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 23.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 24.5 nC power conversion, and i

 4.1. Size:716K  ncepower
 nce50nf130v.pdf pdf_icon

NCE50NF130F

NCE50NF130V N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 23.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 24.5 nC power conversion, and i

 4.2. Size:722K  ncepower
 nce50nf130k.pdf pdf_icon

NCE50NF130F

NCE50NF130K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 23.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 24.5 nC power conversion, and i

 4.3. Size:744K  ncepower
 nce50nf130ll.pdf pdf_icon

NCE50NF130F

NCE50NF130LL N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 23.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 24.5 nC power conversion, and

MOSTRAR MÁS

Otros transistores... NCE50N1K8R, NCE50N2K2D, NCE50N2K2F, NCE50N2K2I, NCE50N2K2K, NCE50N2K2R, NCE50N540K, NCE50NF130D, 7N65, NCE50NF130K, NCE50NF130LL, NCE50NF130T, NCE50NF130V, NCE50NF180, NCE50NF180D, NCE50NF180F, NCE50NF180I