All MOSFET. NCE50NF130F Datasheet

 

NCE50NF130F Datasheet and Replacement


   Type Designator: NCE50NF130F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 34.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 23.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 24.5 nC
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 630 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: TO220F
 
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NCE50NF130F Datasheet (PDF)

 ..1. Size:712K  ncepower
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NCE50NF130F

NCE50NF130FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 110 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 23.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 24.5 nCpower conversion, and i

 4.1. Size:716K  ncepower
 nce50nf130v.pdf pdf_icon

NCE50NF130F

NCE50NF130VN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 110 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 23.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 24.5 nCpower conversion, and i

 4.2. Size:722K  ncepower
 nce50nf130k.pdf pdf_icon

NCE50NF130F

NCE50NF130KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 110 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 23.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 24.5 nCpower conversion, and i

 4.3. Size:744K  ncepower
 nce50nf130ll.pdf pdf_icon

NCE50NF130F

NCE50NF130LLN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 110 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 23.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 24.5 nCpower conversion, and

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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