NCE50NF220 Todos los transistores

 

NCE50NF220 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE50NF220
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 109 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13.5 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 46 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.22 Ohm
   Paquete / Cubierta: TO-220
 

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NCE50NF220 Datasheet (PDF)

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NCE50NF220

NCE50NF220N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 13.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19 nCpower conversion, and indu

 0.1. Size:853K  ncepower
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NCE50NF220

NCE50NF220FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 13.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19 nCpower conversion, and ind

 0.2. Size:784K  ncepower
nce50nf220k.pdf pdf_icon

NCE50NF220

NCE50NF220KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 13.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19 nCpower conversion, and ind

 0.3. Size:778K  ncepower
nce50nf220i.pdf pdf_icon

NCE50NF220

NCE50NF220IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 13.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19 nCpower conversion, and ind

Otros transistores... NCE50NF130LL , NCE50NF130T , NCE50NF130V , NCE50NF180 , NCE50NF180D , NCE50NF180F , NCE50NF180I , NCE50NF180K , 5N60 , NCE50NF220F , NCE50NF220I , NCE50NF220K , NCE50NF330 , NCE50NF330D , NCE50NF330F , NCE50NF330I , NCE50NF330K .

History: APT10M11JVFR

 

 
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