NCE50NF220 MOSFET Datasheet: N-Ch, 500V, 13.5A. Full specification with pinout and replacement list

NCE50NF220 Specs and Replacement

   Type Designator: NCE50NF220
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 109 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 46 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
   Package: TO-220

NCE50NF220 substitution

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NCE50NF220 datasheet

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NCE50NF220 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and indu... See More ⇒

0.1. Size:853K ncepower
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NCE50NF220F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and ind... See More ⇒

0.2. Size:784K ncepower
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NCE50NF220K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and ind... See More ⇒

0.3. Size:778K ncepower
nce50nf220i.pdf pdf_icon

NCE50NF220I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and ind... See More ⇒