NCE50NF220
MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE50NF220
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 109
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 13.5
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 19
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 46
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.22
Ohm
Package:
TO-220
NCE50NF220
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE50NF220
Datasheet (PDF)
..1. Size:795K ncepower
nce50nf220.pdf
NCE50NF220N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 13.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19 nCpower conversion, and indu
0.1. Size:853K ncepower
nce50nf220f.pdf
NCE50NF220FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 13.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19 nCpower conversion, and ind
0.2. Size:784K ncepower
nce50nf220k.pdf
NCE50NF220KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 13.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19 nCpower conversion, and ind
0.3. Size:778K ncepower
nce50nf220i.pdf
NCE50NF220IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 13.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19 nCpower conversion, and ind
0.4. Size:815K ncepower
nce50nf220d.pdf
NCE50NF220DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 13.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19 nCpower conversion, and ind
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