NCE50NF330 Todos los transistores

 

NCE50NF330 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE50NF330
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 93 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 36 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.33 Ohm
   Paquete / Cubierta: TO220
 

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NCE50NF330 Datasheet (PDF)

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NCE50NF330

NCE50NF330N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 280 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.5 nCpower conversion, and indu

 0.1. Size:784K  ncepower
nce50nf330i.pdf pdf_icon

NCE50NF330

NCE50NF330IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 280 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.5 nCpower conversion, and ind

 0.2. Size:809K  ncepower
nce50nf330f.pdf pdf_icon

NCE50NF330

NCE50NF330FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 280 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.5 nCpower conversion, and ind

 0.3. Size:821K  ncepower
nce50nf330d.pdf pdf_icon

NCE50NF330

NCE50NF330DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 280 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.5 nCpower conversion, and ind

Otros transistores... NCE50NF180D , NCE50NF180F , NCE50NF180I , NCE50NF180K , NCE50NF220 , NCE50NF220F , NCE50NF220I , NCE50NF220K , 2SK3568 , NCE50NF330D , NCE50NF330F , NCE50NF330I , NCE50NF330K , NCE50NF520 , NCE50NF520D , NCE50NF520F , NCE50NF520I .

History: NVMFS6H848NL | AOTS26108 | FQP13N06 | AM4935P | VN2210N3 | TPCF8402 | IXTH88N15

 

 
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