NCE50NF330. Аналоги и основные параметры

Наименование производителя: NCE50NF330

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 93 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 12 ns

Cossⓘ - Выходная емкость: 36 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.33 Ohm

Тип корпуса: TO220

Аналог (замена) для NCE50NF330

- подборⓘ MOSFET транзистора по параметрам

 

NCE50NF330 даташит

 ..1. Size:799K  ncepower
nce50nf330.pdfpdf_icon

NCE50NF330

NCE50NF330 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 280 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.5 nC power conversion, and indu

 0.1. Size:784K  ncepower
nce50nf330i.pdfpdf_icon

NCE50NF330

NCE50NF330I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 280 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.5 nC power conversion, and ind

 0.2. Size:809K  ncepower
nce50nf330f.pdfpdf_icon

NCE50NF330

NCE50NF330F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 280 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.5 nC power conversion, and ind

 0.3. Size:821K  ncepower
nce50nf330d.pdfpdf_icon

NCE50NF330

NCE50NF330D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 280 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.5 nC power conversion, and ind

Другие IGBT... NCE50NF180D, NCE50NF180F, NCE50NF180I, NCE50NF180K, NCE50NF220, NCE50NF220F, NCE50NF220I, NCE50NF220K, 4435, NCE50NF330D, NCE50NF330F, NCE50NF330I, NCE50NF330K, NCE50NF520, NCE50NF520D, NCE50NF520F, NCE50NF520I