NCE50NF330D Todos los transistores

 

NCE50NF330D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE50NF330D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 93 W
   Voltaje máximo drenador - fuente |Vds|: 500 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 10 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
   Carga de la puerta (Qg): 12.5 nC
   Tiempo de subida (tr): 12 nS
   Conductancia de drenaje-sustrato (Cd): 36 pF
   Resistencia entre drenaje y fuente RDS(on): 0.33 Ohm
   Paquete / Cubierta: TO263

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NCE50NF330D Datasheet (PDF)

 ..1. Size:821K  ncepower
nce50nf330d.pdf

NCE50NF330D
NCE50NF330D

NCE50NF330DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 280 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.5 nCpower conversion, and ind

 4.1. Size:784K  ncepower
nce50nf330i.pdf

NCE50NF330D
NCE50NF330D

NCE50NF330IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 280 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.5 nCpower conversion, and ind

 4.2. Size:809K  ncepower
nce50nf330f.pdf

NCE50NF330D
NCE50NF330D

NCE50NF330FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 280 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.5 nCpower conversion, and ind

 4.3. Size:799K  ncepower
nce50nf330.pdf

NCE50NF330D
NCE50NF330D

NCE50NF330N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 280 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.5 nCpower conversion, and indu

 4.4. Size:791K  ncepower
nce50nf330k.pdf

NCE50NF330D
NCE50NF330D

NCE50NF330KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 280 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.5 nCpower conversion, and ind

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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