NCE50NF330D Specs and Replacement

Type Designator: NCE50NF330D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 93 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 36 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.33 Ohm

Package: TO263

NCE50NF330D substitution

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NCE50NF330D datasheet

 ..1. Size:821K  ncepower
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NCE50NF330D

NCE50NF330D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 280 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.5 nC power conversion, and ind... See More ⇒

 4.1. Size:784K  ncepower
nce50nf330i.pdf pdf_icon

NCE50NF330D

NCE50NF330I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 280 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.5 nC power conversion, and ind... See More ⇒

 4.2. Size:809K  ncepower
nce50nf330f.pdf pdf_icon

NCE50NF330D

NCE50NF330F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 280 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.5 nC power conversion, and ind... See More ⇒

 4.3. Size:799K  ncepower
nce50nf330.pdf pdf_icon

NCE50NF330D

NCE50NF330 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 280 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.5 nC power conversion, and indu... See More ⇒

Detailed specifications: NCE50NF180F, NCE50NF180I, NCE50NF180K, NCE50NF220, NCE50NF220F, NCE50NF220I, NCE50NF220K, NCE50NF330, SPP20N60C3, NCE50NF330F, NCE50NF330I, NCE50NF330K, NCE50NF520, NCE50NF520D, NCE50NF520F, NCE50NF520I, NCE50NF520K

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