NCE50NF600F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE50NF600F

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 30.9 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6.3 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

Cossⓘ - Capacitancia de salida: 22 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm

Encapsulados: TO220F

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NCE50NF600F datasheet

 ..1. Size:810K  ncepower
 nce50nf600f.pdf pdf_icon

NCE50NF600F

NCE50NF600F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 520 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind

 4.1. Size:793K  ncepower
 nce50nf600k.pdf pdf_icon

NCE50NF600F

NCE50NF600K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 520 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind

 4.2. Size:787K  ncepower
 nce50nf600i.pdf pdf_icon

NCE50NF600F

NCE50NF600I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 520 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind

 4.3. Size:823K  ncepower
 nce50nf600d.pdf pdf_icon

NCE50NF600F

NCE50NF600D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 520 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind

MOSTRAR MÁS

Otros transistores... NCE50NF330I, NCE50NF330K, NCE50NF520, NCE50NF520D, NCE50NF520F, NCE50NF520I, NCE50NF520K, NCE50NF600D, IRF530, NCE50NF600I, NCE50NF600K, NCE50NF600R, NCE5520Q, NCE55P15, NCE6003X, NCE6003XM, NCE6003XY